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SI3493BDV-T1-E3

Vishay Intertechnology

SI3493BDV-T1-E3 by Vishay Intertechnology

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.97 W; Maximum Operating Temperature: 150 Cel; No. of Terminals: 6;

Median Price

$0.392

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 24,822 parts In-Stock

1+ parts

$1.300

100+ parts

$0.574

1k+ parts

$0.408

10k+ parts

$0.317

24,822

$1.300

$0.574

$0.408

$0.317

Mouser Electronics

USA . 2,832 parts In-Stock

1+ parts

$1.470

100+ parts

$0.614

1k+ parts

$0.437

10k+ parts

$0.363

2,832

$1.470

$0.614

$0.437

$0.363

Chip1Stop

Japan . 36,000 parts In-Stock

1+ parts

-

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$0.230

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$0.230

Verical

USA . 3,000 parts In-Stock

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$0.392

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$0.392

Arrow

USA . 3,000 parts In-Stock

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$0.276

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$0.276

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Vyrian

USA . 35,999 parts In-Stock

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$0.230

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Bristol Electronics

USA . 35 parts In-Stock

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$0.563

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$0.225

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Netsource Technology, Inc.

USA . 8,205 parts In-Stock

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NAC Semi

USA . 6,000 parts In-Stock

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$0.460

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$0.460

ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

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Semtec, LLC

USA . 454 parts In-Stock

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Diverse Electronics

Canada . 379 parts In-Stock

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379

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Semi Source

USA . 25 parts In-Stock

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25

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Prism Electronics

USA . 7 parts In-Stock

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Ampacity Inc.

Singapore . 14,809 parts In-Stock

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$0.196

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14,809

$0.196

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Component Stockers USA

USA . 19,943 parts In-Stock

1+ parts

$0.810

100+ parts

$0.520

1k+ parts

$0.360

10k+ parts

$0.440

19,943

$0.810

$0.520

$0.360

$0.440

Perfect Parts

USA . 104,363 parts In-Stock

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104,363

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Kepictronics

USA . 9,000 parts In-Stock

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Assy Fe

Spain . 6,032 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Technical Specifications

Power Field Effect Transistors (FET) SI3493BDV-T1-E3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

8 A

Maximum Drain-Source On Resistance:

.0275 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

25 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI3493BDV-T1-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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