Loading...

SI3476DV-T1-BE3

Vishay Intertechnology

SI3476DV-T1-BE3 by Vishay Intertechnology

Vishay Intertechnology's SI3476DV-T1-BE3 is a N-CHANNEL FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With 4.6A ID and 0.093 ohm RDS(on), it offers fast switching times of 24ns turn on and 27ns turn off.

Median Price

$0.148

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 5,918 parts In-Stock

1+ parts

$0.730

100+ parts

$0.297

1k+ parts

$0.224

10k+ parts

$0.156

5,918

$0.730

$0.297

$0.224

$0.156

Mouser Electronics

USA . 8,650 parts In-Stock

1+ parts

$0.810

100+ parts

$0.327

1k+ parts

$0.225

10k+ parts

$0.174

8,650

$0.810

$0.327

$0.225

$0.174

TTI

USA . 18,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.139

18,000

-

-

-

$0.139

Avnet

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.148

12,000

-

-

-

$0.148

Chip1Stop

Japan . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.144

6,000

-

-

-

$0.144

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 56,056 parts In-Stock

1+ parts

$0.135

100+ parts

-

1k+ parts

-

10k+ parts

-

56,056

$0.135

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

QUARKTWIN TECHNOLOGY LTD

USA . 11,629 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,629

-

-

-

-

Overview

Enhance your electronic projects with the SI3476DV-T1-BE3 Small Signal Field Effect Transistor by Vishay Intertechnology. With a focus on quality and reliability, Vishay Intertechnology offers a wide range of applications in the field of switching technology. This N-channel transistor with a built-in diode is designed for enhancement mode operation, providing efficient performance in a compact package. Whether you're a hobbyist or a professional, this transistor's 80V minimum breakdown voltage, 4.6A maximum drain current, and 3.6W power dissipation ensure optimal functionality in your circuit designs. Upgrade your projects today with Vishay Intertechnology's SI3476DV-T1-BE3!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have better performance characteristics compared to P-Channel transistors, making this a good choice for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can provide additional protection against reverse voltage.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast response times and efficient performance.

Surface Mount: YES

Surface mount design allows for easy and space-saving installation on PCBs.

Minimum DS Breakdown Voltage: 80 V

High breakdown voltage ensures reliable operation even in high voltage applications.

Maximum Power Dissipation (Abs): 3.6 W

High power dissipation capability allows for handling higher current loads without overheating.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environments and conditions.

Maximum Drain Current (ID): 4.6 A

High drain current rating enables the transistor to handle larger current flows, suitable for power applications.

Maximum Drain-Source On Resistance: 0.093 ohm

Low on-resistance minimizes power loss and improves efficiency in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI3476DV-T1-BE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

80 V

Maximum Drain Current (ID):

4.6 A

Maximum Drain-Source On Resistance:

.093 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

16 pF

JEDEC-95 Code:

MO-193AA

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

27 ns

Maximum Turn On Time (ton):

24 ns

Trade Compliance

SI3476DV-T1-BE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.