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SA85AHE3/54

Vishay Intertechnology

SA85AHE3/54 by Vishay Intertechnology

SA85AHE3/54 by Vishay Intertechnology is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 85V VRWM. It has a Pd of 3W, VBR of 94.4-104V, and Vc of 137V. Ideal for transient suppression in applications requiring high breakdown voltage and power dissipation capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,464 parts In-Stock

1+ parts

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8,464

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,241 parts In-Stock

1+ parts

$2.010

100+ parts

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1,241

$2.010

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AZTECH Wire

Italy . 406 parts In-Stock

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$7.244

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406

$7.244

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Continental Prestige Electronics

USA . 2,346 parts In-Stock

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2,346

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Argo Parts USA

USA . 2,314 parts In-Stock

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2,314

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Aranea Global

USA . 500 parts In-Stock

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500

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Overview

Looking for reliable transient suppression devices? Look no further than the Vishay Intertechnology SA85AHE3/54. With a reputation for quality and innovation, Vishay Intertechnology delivers top-of-the-line products that offer superior protection against voltage transients. Ideal for a variety of applications, these devices provide peace of mind and ensure the safety of your electronic equipment. Trust Vishay Intertechnology to provide the value, benefits, and advantages you need in your transient suppression solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product.

Config: SINGLE

The single configuration simplifies installation and maintenance of the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 500 W

The high power dissipation capability protects sensitive electronics from sudden voltage surges.

Nominal Breakdown Voltage: 99.2 V

The nominal breakdown voltage provides stable and consistent protection against voltage spikes.

Package Shape: ROUND

The round shape offers easy integration into various circuit designs.

No. of Terminals: 2

The two terminals enable simple connection to the circuit.

Package Style (Meter): LONG FORM

The long form package style provides ample space for heat dissipation, enhancing the device's performance.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature ensures reliable performance even in harsh environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows for use in a wide range of applications.

Terminal Finish: MATTE TIN

The matte tin finish offers corrosion resistance and improved solderability for a reliable connection.

Terminal Position: AXIAL

The axial terminal position simplifies the device's orientation during installation.

Case Connection: ISOLATED

The isolated case connection ensures safety and prevents any interference with other components.

Maximum Power Dissipation: 3 W

The high power dissipation capability allows the device to handle transient surges effectively.

Minimum Breakdown Voltage: 94.4 V

The minimum breakdown voltage offers protection against lower voltage spikes.

Maximum Breakdown Voltage: 104 V

The maximum breakdown voltage provides protection against higher voltage spikes.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The diode type ensures efficient suppression of transient voltage spikes.

Technology: AVALANCHE

The avalanche technology enhances the device's ability to handle high-power surges effectively.

Terminal Form: WIRE

The wire terminal form simplifies installation and ensures a secure connection.

Maximum Repetitive Peak Reverse Voltage: 85 V

The maximum repetitive peak reverse voltage offers continuous protection against voltage transients.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures protection in a specific direction, providing targeted suppression of voltage spikes.

Maximum Clamping Voltage: 137 V

The maximum clamping voltage limits the voltage during a transient event, protecting downstream components.

Diode Element Material: SILICON

The silicon diode element material offers high efficiency and reliability in suppressing transient voltage spikes.

Technical Specifications

Transient Suppression Devices SA85AHE3/54 attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

Maximum Breakdown Voltage:

104 V

Minimum Breakdown Voltage:

94.4 V

Nominal Breakdown Voltage:

99.2 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

137 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-204AC

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

3 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

85 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SA85AHE3/54 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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