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SA8.5

Daco Semiconductor

SA8.5 by Daco Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Median Price

$0.138

Lifecycle Status

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3

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1k+

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Verical

USA . 20,000 parts In-Stock

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$0.138

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$0.138

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Nova Conductors

Japan . 900 parts In-Stock

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$8.079

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$8.079

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Vyrian

USA . 19,611 parts In-Stock

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19,611

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Continental Prestige Electronics

USA . 3,454 parts In-Stock

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$7.918

3,454

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Perfect Parts

USA . 8,803 parts In-Stock

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8,803

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Argo Parts USA

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Netroflash

USA . 100 parts In-Stock

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$7.918

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$7.675

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$7.514

100

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$7.675

$7.514

Technical Specifications

Transient Suppression Devices SA8.5 attributes and parameters. Explore more Transient Suppression Devices devices from Daco Semiconductor

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, PRSM-MIN

Maximum Breakdown Voltage:

11.5 V

Minimum Breakdown Voltage:

9.44 V

Nominal Breakdown Voltage:

10.47 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

15.9 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JEDEC-95 Code:

DO-15

JESD-30 Code:

O-PALF-W2

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Reference Standard:

MIL-STD-750

Maximum Repetitive Peak Reverse Voltage:

8.5 V

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

8.5 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

SA8.5 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Daco Semiconductor

DACO, established in 1994 , is the pioneer and innovative manufacturer of wafer and module device assembly in Taiwan dedicated in the designing, manufacturing of superior Semiconductor products covering discrete parts and modules of IGBT , SiC (Silicon Carbide) Diode , SiC (Silicon Carbide) MOSFET, Silicon Diode, Schottky, MOSFET and Thyristor. Cutting Edge Technology and Performance: The founder of DACO, who comes from the Semiconductor Research Center of National Science Council in Taiwan, is experienced in the fabrication of Metal Gat IC, Poly Gat IC, Power MOS, and Sipos GPP wafer. With the excellent technology, he has been leading DACO in an outstanding position in the trend of advanced technology in power electronic semiconductors. For the past years, DACO had been maintaining collaborative relationship with the companies serving military applications in researching and manufacturing high power rectifier modules on military specifications. In the recent years, our R&D team has been developing cutting edge technology to obtain various patents, and implementing vertical technology to upgrade the service to customers.

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