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MDP1401682G

Vishay Intertechnology

MDP1401682G by Vishay Intertechnology

Vishay Intertechnology's MDP1401682G resistor network features 13 elements with 6800 ohm resistance, 2% tolerance, and 0.19 W power dissipation. Ideal for through-hole mounting applications requiring a temperature range of -55 to 150 °C, with a temperature coefficient of 100 ppm/°C.

Median Price

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Lifecycle Status

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Electro Mavin

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Nova Conductors

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Electronic Expediters

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Semicontronic

India . 1,338 parts In-Stock

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Corohmni

South Africa . 115 parts In-Stock

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AZTECH Wire

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Overview

Enhance your electronic projects with the MDP1401682G resistor network by Vishay Intertechnology. With a reputation for superior quality and reliability, Vishay Intertechnology products are a top choice among industry professionals. The MDP1401682G offers precision performance in a wide range of applications, providing customers with unmatched value and benefits. Trust Vishay Intertechnology to deliver innovative solutions for all your resistor network needs.

Feature Benefit Bullets

Element Power Dissipation: 0.19 W

The low power dissipation makes this product energy efficient and suitable for applications where power consumption is a concern.

Rated Temperature: 25 °C

The rated temperature ensures reliable performance under normal operating conditions.

Technology: METAL GLAZE/THICK FILM

The use of metal glaze/thick film technology provides high stability and accuracy in resistance values.

No. of Elements: 13

Having 13 elements allows for more versatility in circuit design and customization.

Temperature Coef Tracking: 50 ppm/°C

The low temperature coefficient tracking ensures minimal resistance changes with temperature variations.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for use in a wide range of environments without compromising performance.

Resistor Type: ARRAY/NETWORK RESISTOR

The array/network resistor type offers multiple resistance values in a single package, providing space-saving and cost-effective solutions.

Technical Specifications

Resistor Networks & Arrays MDP1401682G attributes and parameters. Explore more Resistor Networks & Arrays devices from Vishay Intertechnology

Specs

Element Power Dissipation:

.19 W

First Element Resistance:

6800 ohm

JESD-609 Code:

e0

Manufacturer Series:

MDP14

Mounting Type:

Network Type:

BUSSED

No. of Elements:

13

No. of Functions:

1

No. of Terminals:

14

Maximum Operating Temperature:

Minimum Operating Temperature:

-55 Cel

Shape (Package):

RECTANGULAR PACKAGE

Packing Method:

TUBE

Rated Power Dissipation (P):

Rated Temperature:

25 Cel

Resistor Type:

Technology:

METAL GLAZE/THICK FILM

Temperature Coef (ppm/Cel):

100

Temperature Coef Tracking:

50 ppm/Cel

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Shape:

FLAT

Tolerance:

2 %

Trade Compliance

MDP1401682G Resistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8533.21.00.60

SB

8533.21.00.75

NSN

5905-01-423-5794, 5905014235794

NIIN

014235794

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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