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JANTX2N6661

Vishay Intertechnology

JANTX2N6661 by Vishay Intertechnology

Vishay Intertechnology's JANTX2N6661 is a N-CHANNEL FET with 90V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a built-in DIODE, it operates in ENHANCEMENT MODE with max ID of 0.86A and RDS(on) of 4Ω. With MIL standard compliance, it can withstand -55 to 150°C temperatures.

Median Price

$72.390

Lifecycle Status

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TTI

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Speed Components Ltd

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NexGen Digital

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Aztec Data Supply Inc.

USA . 849 parts In-Stock

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Corohmni

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Semicontronic

India . 2,772 parts In-Stock

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Argo Parts USA

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Overview

Unleash the power of cutting-edge technology with the JANTX2N6661 by Vishay Intertechnology. This small signal field effect transistor (FET) is designed for high-performance switching applications, offering unparalleled quality and reliability. With a robust metal-oxide semiconductor technology and a maximum operating temperature of 150°C, this N-channel transistor provides exceptional value and benefits to customers looking for efficient and dependable solutions. Experience the advantages of Vishay Intertechnology's expertise in semiconductor manufacturing with the JANTX2N6661.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide excellent thermal conductivity, helping to dissipate heat efficiently and improve overall performance of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower on-resistance and higher mobility compared to P-channel FETs, making them a good choice for high-performance switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps protect the transistor from voltage spikes and reverse currents, improving reliability and robustness of the circuit.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speed and low on-resistance, making it ideal for controlling high-power loads efficiently.

Minimum DS Breakdown Voltage: 90 V

With a high breakdown voltage, this transistor can handle relatively high voltages without breakdown, providing a reliable solution for various applications.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into circular layouts, saving space and providing a clean aesthetic appearance.

Terminal Form: WIRE

Wire terminals are known for their ease of soldering and connection, offering a reliable electrical connection for the transistor in various circuit designs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors require a positive voltage applied to the gate to conduct, offering precise control over the switching operation and reducing power consumption.

No. of Terminals: 3

With three terminals, this transistor can be easily controlled and integrated into various circuit configurations, providing flexibility in circuit design.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers good mechanical stability and protection for the transistor, ensuring reliable performance in harsh environmental conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high reliability, low gate leakage, and fast switching speed, making it a popular choice for small signal FET applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance, ensuring reliable operation in demanding conditions.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and low leakage current, making them a versatile choice for a wide range of applications from audio amplification to switching circuits.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature, this transistor can function in cold environments without losing efficiency or performance, making it suitable for outdoor and industrial applications.

Terminal Finish: TIN LEAD

Tin lead terminals provide good solderability and conductivity, ensuring a reliable electrical connection and ease of assembly in circuit board manufacturing.

Maximum Drain Current (ID): 0.86 A

With a high maximum drain current rating, this transistor can handle relatively high currents without overheating, making it suitable for applications that require high-power switching.

Maximum Drain-Source On Resistance: 4 ohm

The low on-resistance of 4 ohms ensures minimal power loss and efficient switching operation, making this transistor ideal for high-efficiency power management applications.

Terminal Position: BOTTOM

The bottom terminal position allows for easy mounting and connection in circuit designs, offering flexibility in layout and integration into various electronic devices.

Case Connection: DRAIN

The drain connection provides a reliable interface for external circuitry, allowing for efficient control and operation of the transistor in switching applications.

Maximum Feedback Capacitance (Crss): 10 pF

With a low feedback capacitance of 10 pF, this transistor offers fast switching speeds and minimal signal distortion, making it suitable for high-frequency applications where signal integrity is crucial.

Reference Standard: MIL

Designed to meet MIL standards, this transistor ensures high reliability and performance in military and aerospace applications where ruggedness and durability are essential.

Technical Specifications

Small Signal Field Effect Transistors (FET) JANTX2N6661 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

90 V

Maximum Drain Current (ID):

.86 A

Maximum Drain-Source On Resistance:

4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

10 pF

JEDEC-95 Code:

TO-205AD

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Qualified

Reference Standard:

MIL

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

JANTX2N6661 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-563-9437, 5961015639437, 5961-01-188-6384, 5961011886384

NIIN

015639437, 011886384

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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