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GSOT05-GS08

Vishay Intertechnology

GSOT05-GS08 by Vishay Intertechnology

Vishay Intertechnology's GSOT05-GS08 is a single bidirectional transient suppression device with 480W peak power dissipation and 6.8V breakdown voltage. Ideal for protecting sensitive electronics from voltage spikes in applications requiring compact surface-mount components.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

< 1k

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Vyrian

USA . 506 parts In-Stock

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506

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Corohmni

South Africa . 800 parts In-Stock

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$0.104

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800

$0.104

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Aztec Data Supply Inc.

USA . 4,848 parts In-Stock

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$0.170

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$0.170

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Semicontronic

India . 162 parts In-Stock

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$1.010

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$0.985

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$0.980

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162

$1.010

$0.985

$0.980

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Ampacity Inc.

Singapore . 951 parts In-Stock

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$2.010

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951

$2.010

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AZTECH Wire

Italy . 576 parts In-Stock

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$7.900

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576

$7.900

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Continental Prestige Electronics

USA . 6,851 parts In-Stock

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Argo Parts USA

USA . 972 parts In-Stock

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Bastille Electronics

Australia . 800 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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Kepictronics

USA . 355 parts In-Stock

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Overview

Experience superior transient suppression with the GSOT05-GS08 by Vishay Intertechnology. This cutting-edge product offers unparalleled quality and reliability, backed by the trusted name of Vishay Intertechnology. Ideal for a wide range of applications, this transient suppression device provides essential protection for your electronic equipment. Say goodbye to worries about voltage spikes and surges, as the GSOT05-GS08 delivers maximum protection with minimal hassle. Trust Vishay Intertechnology to keep your devices safe and secure.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable.

Config: SINGLE

The single configuration simplifies installation and maintenance of this transient suppression device.

Surface Mount: YES

The surface mount capability allows for easy and secure mounting of the device on PCBs.

Maximum Non Repetitive Peak Reverse Power Dissipation: 480 W

With a high power dissipation rating, this device can handle large transient surges effectively.

Nominal Breakdown Voltage: 6.8 V

The nominal breakdown voltage ensures protection against overvoltage conditions up to 6.8 V.

Package Shape: RECTANGULAR

The rectangular package shape enables efficient use of space on the PCB.

No. of Terminals: 3

The three terminals provide a secure and stable connection for the device.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for compact integration into electronic systems.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this device can withstand harsh environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable performance in a wide range of environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent conductivity and corrosion resistance.

Terminal Position: DUAL

The dual terminal position offers flexibility in the orientation of the device during installation.

Minimum Breakdown Voltage: 6 V

The minimum breakdown voltage of 6 V ensures protection against lower voltage transient events.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The trans voltage suppressor diode type offers effective transient suppression capabilities.

Technology: AVALANCHE

The avalanche technology used in this device ensures fast and reliable response to transient surges.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical strength and ease of soldering during assembly.

Maximum Repetitive Peak Reverse Voltage: 5 V

With a maximum repetitive peak reverse voltage of 5 V, this device offers protection in low voltage applications.

Polarity: BIDIRECTIONAL

The bidirectional polarity allows for protection against transient surges in both directions.

Maximum Clamping Voltage: 12 V

The maximum clamping voltage of 12 V ensures that voltage spikes are limited to a safe level.

Diode Element Material: SILICON

The use of silicon as the diode element material offers high performance and reliability in transient suppression applications.

Technical Specifications

Transient Suppression Devices GSOT05-GS08 attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

6.8 V

Maximum Clamping Voltage:

12 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

480 W

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

GSOT05-GS08 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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