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GSOT03C-HG3-18

Vishay Intertechnology

GSOT03C-HG3-18 by Vishay Intertechnology

Vishay Intertechnology GSOT03C-HG3-18 is a transient suppression device with 2 elements in common anode configuration. It offers a max non-repetitive peak reverse power dissipation of 369W and breakdown voltage of 4.6V. Ideal for applications requiring bidirectional protection against voltage transients in automotive electronics, meeting AEC-Q101 standards.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,230 parts In-Stock

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8,230

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Nova Conductors

Japan . 52 parts In-Stock

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52

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 308 parts In-Stock

1+ parts

$0.010

100+ parts

$0.010

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$0.010

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308

$0.010

$0.010

$0.010

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Corohmni

South Africa . 572 parts In-Stock

1+ parts

$0.085

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572

$0.085

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Aztec Data Supply Inc.

USA . 2,597 parts In-Stock

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$0.090

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2,597

$0.090

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Ampacity Inc.

Singapore . 939 parts In-Stock

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$1.010

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939

$1.010

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AZTECH Wire

Italy . 376 parts In-Stock

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$6.146

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376

$6.146

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Argo Parts USA

USA . 3,587 parts In-Stock

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3,587

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Continental Prestige Electronics

USA . 3,412 parts In-Stock

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Bastille Electronics

Australia . 50 parts In-Stock

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Overview

Unleash the power of protection with the GSOT03C-HG3-18 by Vishay Intertechnology. As a top-of-the-line transient suppression device, this product offers unmatched quality and reliability in safeguarding your electronics. Whether you're looking to shield sensitive equipment from voltage spikes or ensure uninterrupted performance in demanding environments, this common anode diode is the ultimate solution. With Vishay's cutting-edge technology and AEC-Q101 compliance, rest assured that your devices are in safe hands. Experience peace of mind and superior protection with the GSOT03C-HG3-18.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Config: COMMON ANODE, 2 ELEMENTS

Allows for effective transient suppression across both elements, offering enhanced protection for connected devices.

Maximum Non Repetitive Peak Reverse Power Dissipation: 369 W

Capable of handling high levels of power dissipation, making it suitable for applications with transient surges.

Nominal Breakdown Voltage: 4.6 V

Provides reliable overvoltage protection by triggering at a predetermined voltage level.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high-temperature environments, ensuring continuous protection under varying conditions.

Reference Standard: AEC-Q101

Complies with industry standards, ensuring quality and performance in automotive applications.

Technical Specifications

Transient Suppression Devices GSOT03C-HG3-18 attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Minimum Breakdown Voltage:

4 V

Nominal Breakdown Voltage:

4.6 V

Maximum Clamping Voltage:

10 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

369 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

BIDIRECTIONAL

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

GSOT03C-HG3-18 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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