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GF1GHE3_A/H

Vishay Intertechnology

GF1GHE3_A/H by Vishay Intertechnology

Vishay Intertechnology's GF1GHE3_A/H is a single rectifier diode with 400V reverse test voltage and 1A max output current. Ideal for applications requiring fast recovery time of 2us, low reverse current of 5uA, and operating temperatures ranging from -65 to 175°C. Suitable for automotive electronics due to AEC-Q101 compliance.

Median Price

$2.070

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,350 parts In-Stock

1+ parts

$2.070

100+ parts

$0.840

1k+ parts

$0.565

10k+ parts

$0.433

1,350

$2.070

$0.840

$0.565

$0.433

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,308 parts In-Stock

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1,308

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Nova Conductors

Japan . 54 parts In-Stock

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54

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,952 parts In-Stock

1+ parts

$0.113

100+ parts

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1,952

$0.113

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Corohmni

South Africa . 261 parts In-Stock

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$0.185

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261

$0.185

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Semicontronic

India . 1,281 parts In-Stock

1+ parts

$0.750

100+ parts

$0.731

1k+ parts

$0.728

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-

1,281

$0.750

$0.731

$0.728

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Ampacity Inc.

Singapore . 1,072 parts In-Stock

1+ parts

$0.750

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1,072

$0.750

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Continental Prestige Electronics

USA . 5,863 parts In-Stock

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Bastille Electronics

Australia . 50 parts In-Stock

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Argo Parts USA

USA . 17 parts In-Stock

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Overview

Discover the GF1GHE3_A/H by Vishay Intertechnology, a top-quality rectifier diode offering exceptional performance and reliability. Ideal for a wide range of applications, this diode features a fast reverse recovery time of 2 us and a low reverse current of 5 uA. With a maximum forward voltage of 1.1 V and a peak repetitive reverse voltage of 400 V, this diode ensures efficient power management in your electronic devices. Trust Vishay Intertechnology for high-quality components that deliver value and superior performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it a reliable choice for various applications.

Config: SINGLE

The single configuration simplifies circuit design and installation, making it easier to incorporate this diode into different projects.

Surface Mount: YES

This feature allows for easy and convenient placement on circuit boards, saving time and effort during assembly.

Maximum Reverse Recovery Time: 2 us

With a fast reverse recovery time, this diode efficiently switches between conducting and non-conducting states, improving overall performance.

Maximum Reverse Current: 5 uA

The low reverse current minimizes power losses and enhances efficiency in the circuit.

Package Shape: RECTANGULAR

The rectangular shape is space-efficient, making it suitable for compact designs where size is a constraint.

Reverse Test Voltage: 400 V

The high reverse test voltage ensures reliability and protection against voltage spikes, making it suitable for demanding applications.

No. of Terminals: 2

With two terminals, this diode is easy to install and connect in a circuit, simplifying the overall design process.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it ideal for designs with limited space.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature allows for reliable performance in a wide range of environments, making it versatile for various applications.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature ensures that this diode can function in extreme cold conditions, increasing its usability.

Terminal Finish: TIN

The tin terminal finish provides excellent solderability and corrosion resistance, ensuring a secure connection in the circuit.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit design, allowing for different connection options to suit specific requirements.

Maximum Time At Peak Reflow Temperature (s): 30

The specified reflow time ensures proper soldering of the diode during assembly, reducing the risk of damage.

Peak Reflow Temperature °C: 250

The high peak reflow temperature capability ensures the diode can withstand soldering processes without being compromised.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures the diode meets automotive quality and reliability requirements, making it suitable for automotive applications.

Diode Type: RECTIFIER DIODE

This rectifier diode is designed for converting alternating current to direct current, making it an essential component in power supply circuits.

Maximum Forward Voltage (VF): 1.1 V

The low forward voltage drop minimizes power losses and improves energy efficiency in the circuit.

Maximum Output Current: 1 A

With a high output current rating, this diode can handle heavy loads, making it suitable for power applications.

Terminal Form: C BEND

The C bend terminal form provides a secure connection and ensures easy installation in the circuit.

Maximum Repetitive Peak Reverse Voltage: 400 V

The high repetitive peak reverse voltage rating provides protection against voltage surges, making it ideal for voltage regulation applications.

Maximum Non Repetitive Peak Forward Current: 30 A

The high non-repetitive peak forward current capability allows the diode to handle short-duration high current spikes without damage.

Diode Element Material: SILICON

The silicon diode element material offers high electrical conductivity and reliability, making it a popular choice for various electronic devices.

Technical Specifications

Diodes & Rectifiers GF1GHE3_A/H attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Additional Features:

FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JEDEC-95 Code:

DO-214BA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

250

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

2 us

Reverse Test Voltage:

400 V

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

GF1GHE3_A/H Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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