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BZG05C6V2-HE3-TR3

Vishay Intertechnology

BZG05C6V2-HE3-TR3 by Vishay Intertechnology

Vishay Intertechnology's BZG05C6V2-HE3-TR3 Zener Diode has a 6.2 V nominal reference voltage, 35 mA working test current, and 1.25 W max power dissipation. Ideal for applications requiring precise voltage regulation in automotive electronics, telecommunications, and industrial equipment due to its AEC-Q101 reference standard compliance.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,771 parts In-Stock

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VNN

France . 1,823 parts In-Stock

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Nova Conductors

Japan . 650 parts In-Stock

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650

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Distributors (Availability)

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Ampacity Inc.

Singapore . 995 parts In-Stock

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$0.010

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995

$0.010

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Corohmni

South Africa . 256 parts In-Stock

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$0.060

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256

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Aztec Data Supply Inc.

USA . 1,169 parts In-Stock

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$0.100

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$0.100

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Semicontronic

India . 503 parts In-Stock

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$2.010

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$1.960

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$1.950

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503

$2.010

$1.960

$1.950

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AZTECH Wire

Italy . 812 parts In-Stock

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$8.692

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Argo Parts USA

USA . 2,312 parts In-Stock

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Continental Prestige Electronics

USA . 2,251 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Enhance your electronic designs with the high-quality BZG05C6V2-HE3-TR3 Zener Diode from Vishay Intertechnology. This single-configured diode, with a maximum voltage tolerance of 6.45%, offers reliable performance and precise voltage regulation. Perfect for applications requiring stable voltage references, transient protection, and voltage clamping, this small outline package diode is ideal for a wide range of projects. Trust Vishay Intertechnology for superior products that deliver exceptional value and performance to meet all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides good protection and durability for the zener diode.

Working Test Current: 35 mA

The high working test current of 35 mA allows the zener diode to operate effectively under various conditions.

Surface Mount: YES

The surface mount capability makes installation and assembly of the zener diode convenient and efficient.

Maximum Voltage Tolerance: 6.45 %

The tight maximum voltage tolerance of 6.45% ensures accurate and reliable voltage regulation.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows the zener diode to withstand elevated temperatures without compromising performance.

Terminal Finish: Matte Tin (Sn)

The matte tin terminal finish provides good conductivity and solderability for secure connections.

Maximum Power Dissipation: 1.25 W

The high maximum power dissipation of 1.25 W allows the zener diode to handle high power loads with efficiency.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and quality for automotive applications.

Diode Type: ZENER DIODE

The zener diode type indicates that it is specifically designed for voltage regulation and protection.

Nominal Reference Voltage: 6.2 V

The nominal reference voltage of 6.2 V indicates the intended voltage regulation level for the zener diode.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that the zener diode conducts current in only one direction, providing effective voltage regulation.

Diode Element Material: SILICON

The use of silicon as the diode element material offers high efficiency and reliability for consistent performance.

Technical Specifications

Zener Diodes BZG05C6V2-HE3-TR3 attributes and parameters. Explore more Zener Diodes devices from Vishay Intertechnology

Specs

Additional Features:

HIGH RELIABILITY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1.25 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

6.2 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

6.45 %

Working Test Current:

35 mA

Trade Compliance

BZG05C6V2-HE3-TR3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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