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1N4687TR

Vishay Intertechnology

1N4687TR by Vishay Intertechnology

Vishay Intertechnology's 1N4687TR Zener Diode has a nominal reference voltage of 4.3V, max power dissipation of 0.5W, and a working test current of 0.05mA. Ideal for applications requiring precise voltage regulation in electronic circuits with a max operating temperature of 175°C.

Median Price

$5.870

Lifecycle Status

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In-Stock Inventory

1k+

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Mouser Electronics

USA . 103 parts In-Stock

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VNN

France . 24,321 parts In-Stock

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NexGen Digital

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Vyrian

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Nova Conductors

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Corohmni

South Africa . 61 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,753 parts In-Stock

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Ampacity Inc.

Singapore . 199 parts In-Stock

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AZTECH Wire

Italy . 1,262 parts In-Stock

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Continental Prestige Electronics

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Bastille Electronics

Australia . 11,694 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Argo Parts USA

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QualityLine Systems

Poland . 4,920 parts In-Stock

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Overview

Experience superior quality and reliability with the Vishay Intertechnology 1N4687TR Zener Diode. This powerful component offers a wide range of applications, providing stability and precision in voltage regulation. With a maximum voltage tolerance of 5% and a nominal reference voltage of 4.3V, this diode ensures optimal performance in various electronic circuits. Trust Vishay Intertechnology for cutting-edge technology and unmatched value in every product. Elevate your designs with the 1N4687TR and unlock new possibilities in your projects.

Feature Benefit Bullets

Config: SINGLE

SINGLE configuration makes this Zener diode easy to use and install in a circuit without the need for complex connections.

Working Test Current: 0.05 mA

Low working test current ensures minimal power consumption and helps in increasing the efficiency of the circuit.

Maximum Voltage Tolerance: 5%

High voltage tolerance of 5% provides stability in voltage regulation, making it suitable for applications requiring precise voltage control.

Maximum Operating Temperature: 175 °C

High maximum operating temperature of 175°C ensures reliable performance even in demanding environments with elevated temperatures.

Terminal Finish: Tin (Sn)

Tin terminal finish offers good solderability and stability, making it easy to integrate the diode into the circuit.

Maximum Power Dissipation: 0.5 W

With a maximum power dissipation of 0.5W, this Zener diode can handle high power levels without any risk of overheating, ensuring long-term reliability.

Diode Type: ZENER DIODE

Being a Zener diode, it provides stable voltage regulation and protection against voltage surges, making it suitable for a wide range of electronic applications.

Nominal Reference Voltage: 4.3 V

The nominal reference voltage of 4.3V ensures accurate voltage regulation and precise control over the circuit, making it ideal for various voltage reference applications.

Technical Specifications

Zener Diodes 1N4687TR attributes and parameters. Explore more Zener Diodes devices from Vishay Intertechnology

Specs

Config:

SINGLE

Diode Type:

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Maximum Power Dissipation:

.5 W

Nominal Reference Voltage:

4.3 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Maximum Voltage Tolerance:

5 %

Working Test Current:

.05 mA

Trade Compliance

1N4687TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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