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TLP627F

Toshiba

TLP627F by Toshiba

Toshiba's TLP627F is an optocoupler with Darlington configuration, built-in diode, and resistor. It has a max forward current of 0.025A and operates b/w -25 to 85°C. With a collector-emitter breakdown voltage of 300V, it's ideal for applications requiring high isolation voltage up to 5000V.

Median Price

$2.890

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Continental Prestige Electronics

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Overview

Toshiba's TLP627F Optocoupler Transistor Output offers reliability and quality in a compact design. This versatile component is ideal for a wide range of applications, from industrial control systems to consumer electronics. With a high current transfer ratio and built-in diode and resistor, this optocoupler ensures seamless performance and efficient power usage. Trust in Toshiba's reputation for excellence and choose the TLP627F for your next project.

Feature Benefit Bullets

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain, making this optocoupler suitable for applications requiring high output current.

Maximum Forward Current: 0.025 A

The low forward current ensures energy efficiency and helps prevent overheating in the application.

Optoelectronic Type: TRANSISTOR OUTPUT OPTOCOUPLER

Transistor output optocouplers offer fast response times and high switching speeds, making them ideal for applications requiring quick signal transmission.

Maximum Operating Temperature: 85 °C

The high operating temperature range allows this optocoupler to be used in a variety of environments without risking performance issues.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature ensures that this optocoupler can operate reliably even in cold conditions.

Maximum Power Dissipation: 0.32 W

The low power dissipation helps in reducing heat generation and prolonging the lifespan of the optocoupler.

Minimum Current Transfer Ratio: 1000 %

A high current transfer ratio ensures accurate signal transmission and minimal signal loss in the application.

Maximum Dark Current: 200 nA

Low dark current ensures minimal leakage current when the optocoupler is in the off state, improving overall efficiency.

Minimum Collector-emitter Breakdown Voltage: 300 V

The high breakdown voltage allows this optocoupler to handle high voltages safely, making it suitable for high-voltage applications.

Nominal Current Transfer Ratio: 4000 %

A high nominal current transfer ratio ensures reliable signal transmission with minimal distortion, making this optocoupler suitable for high-performance applications.

Maximum Isolation Voltage: 5000 V

The high isolation voltage ensures safe electrical isolation between input and output, protecting sensitive components in the application.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting provides secure physical attachment and makes it easier to integrate the optocoupler into a circuit board.

Maximum Forward Voltage: 1.3 V

The low forward voltage drop helps in reducing power consumption and heat dissipation, improving overall efficiency.

Maximum On State Current: 0.15 A

The high on-state current capability allows this optocoupler to switch high loads and handle peak current without performance degradation.

Technical Specifications

Optocoupler Transistor Outputs TLP627F attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Toshiba

Specs

Additional Features:

UL RECOGNIZED

Minimum Collector-emitter Breakdown Voltage:

300 V

Configuration:

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Minimum Current Transfer Ratio:

1000 %

Nominal Current Transfer Ratio:

4000 %

Maximum Dark Current:

200 nA

Maximum Forward Current:

.025 A

Maximum Forward Voltage:

1.3 V

Maximum Isolation Voltage:

5000 V

Mounting Feature:

No. of Elements:

1

Maximum On State Current:

.15 A

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Optoelectronic Type:

Maximum Power Dissipation:

.32 W

Sub-Category:

Optocoupler - Transistor Outputs

Trade Compliance

TLP627F Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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