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RN2110

Toshiba

RN2110 by Toshiba

Toshiba RN2110 is a PNP BJT with VCEsat of 0.3V, hFE of 120, and IC of 0.1A. Ideal for switching applications due to built-in resistor and small outline package style. Operates at max temp of 150°C with fT of 200MHz for high-speed performance.

Median Price

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Lifecycle Status

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< 1k

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Nova Conductors

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Ampacity Inc.

Singapore . 1,379 parts In-Stock

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$28.050

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Kepictronics

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Argo Parts USA

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Continental Prestige Electronics

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Aranea Global

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Overview

Enhance your electronic projects with the Toshiba RN2110, a top-quality small signal bipolar junction transistor that offers exceptional performance and reliability. Manufactured by Toshiba, a trusted name in the industry, this PNP transistor boasts a single configuration with a built-in resistor, making it ideal for switching applications. With a low VCEsat of 0.3V and a high DC current gain of 120, this transistor delivers efficient operation and precise control. Whether you're a hobbyist or a professional, the Toshiba RN2110 provides the value and benefits you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the transistor lightweight and resistant to external elements, ensuring durability and reliability in various environments.

Polarity or Channel Type: PNP

PNP configuration allows for high current flow when needed, making it suitable for switching applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space on the PCB, making it more convenient for integration into applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast response times and efficient performance in switching circuits.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly, saving time and effort during production.

Maximum VCEsat: 0.3 V

Low VCEsat minimizes power losses and improves efficiency in the transistor's operation, making it ideal for low-power applications.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and alignment on the PCB, enhancing the overall manufacturability of the product.

Terminal Form: GULL WING

Gull wing terminals provide secure solder connections, ensuring reliable electrical connections in the circuit.

No. of Terminals: 3

Three terminals simplify the connection process and reduce the chances of wiring errors, enhancing the overall usability of the transistor.

Maximum Power Dissipation (Abs): 0.1 W

Low power dissipation ensures the transistor remains within safe operating temperatures, improving its overall longevity and reliability.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it suitable for compact electronic devices and applications with limited board space.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures signal amplification and reliable switching performance in the circuit.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to withstand elevated temperatures, making it suitable for a wide range of operating conditions.

Maximum Collector-Base Capacitance: 6 pF

Low collector-base capacitance minimizes signal distortion and ensures accurate signal processing in high-frequency applications.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating provides a wide voltage handling range, making the transistor versatile and suitable for various voltage levels.

Transistor Element Material: SILICON

Silicon material offers high conductivity and reliability, ensuring stable and consistent performance in the transistor.

Maximum Collector Current (IC): 0.1 A

High collector current rating allows for handling moderate current levels, making the transistor suitable for a wide range of applications.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and allows for easy integration into different types of PCB layouts.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency enables fast signal switching and amplification, making the transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) RN2110 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

6 pF

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

RN2110 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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