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RN1907(TE85L,F)

Toshiba

RN1907(TE85L,F) by Toshiba

Toshiba's RN1907(TE85L,F) is a NPN BJT transistor with 2 elements, 0.1A max collector current, and 0.2W power dissipation. Ideal for small signal applications requiring min hFE of 80.

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Semicontronic

India . 1,065 parts In-Stock

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$9.050

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$8.824

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$8.778

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1,065

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Ampacity Inc.

Singapore . 1,542 parts In-Stock

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$36.050

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1,542

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Argo Parts USA

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4,933

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Continental Prestige Electronics

USA . 3,527 parts In-Stock

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3,527

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Aranea Global

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100

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Overview

Discover the superior quality and reliability of Toshiba's RN1907(TE85L,F) NPN Small Signal Bipolar Junction Transistor. Perfect for a wide range of applications, this transistor offers exceptional performance and efficiency. With a high minimum DC current gain of 80 and maximum power dissipation of 0.2W, this transistor provides reliable operation and long-lasting durability. Trust in Toshiba's reputation for excellence and innovation, and unlock the potential of your electronic projects with the RN1907(TE85L,F).

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile in various electronic applications.

Surface Mount: YES

Surface mount technology allows for easy and compact integration onto PCBs, saving space and enabling efficient assembly processes.

No. of Elements: 2

Having 2 elements allows for more complex circuit design options and flexibility in creating amplification or switching configurations.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2 W, this transistor can handle moderate power levels without overheating, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 80

A minimum DC current gain of 80 indicates good signal amplification capabilities, making this transistor suitable for amplification tasks in electronic circuits.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability compared to other materials, ensuring stable operation over a wide range of temperatures and voltages.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads, making it suitable for various amplification and switching tasks in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) RN1907(TE85L,F) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

80

No. of Elements:

2

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

RN1907(TE85L,F) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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