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HN2D01FUTE85N

Toshiba

HN2D01FUTE85N by Toshiba

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Diodes & Rectifiers HN2D01FUTE85N attributes and parameters. Explore more Diodes & Rectifiers devices from Toshiba

Specs

Config:

SEPARATE, 3 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-G6

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

3

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

.08 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.6 W

Qualification:

Not Qualified

Maximum Reverse Current:

.5 uA

Maximum Reverse Recovery Time:

.004 us

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

HN2D01FUTE85N Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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