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HN2D02FUTW1T1G

Onsemi

HN2D02FUTW1T1G by Onsemi

HN2D02FUTW1T1G by Onsemi is a small outline rectifier diode with 3 separate elements, matte tin finish, and gull wing terminal form. It has a max reverse recovery time of 0.003 us, max output current of 0.1 A, and max repetitive peak reverse voltage of 85 V. Ideal for applications requiring fast switching speeds in electronic circuits.

Median Price

$0.083

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 9,457 parts In-Stock

1+ parts

$0.083

100+ parts

$0.074

1k+ parts

$0.066

10k+ parts

$0.061

9,457

$0.083

$0.074

$0.066

$0.061

DigiKey

USA . 31,465 parts In-Stock

1+ parts

$0.180

100+ parts

$0.102

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-

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$0.064

31,465

$0.180

$0.102

-

$0.064

Mouser Electronics

USA . 13,496 parts In-Stock

1+ parts

$0.180

100+ parts

$0.099

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$0.087

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$0.064

13,496

$0.180

$0.099

$0.087

$0.064

Newark

USA . 13,098 parts In-Stock

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$0.216

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$0.121

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$0.216

$0.121

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Rochester

USA . 374,935 parts In-Stock

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$0.075

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$0.063

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$0.056

374,935

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$0.063

$0.056

Verical

USA . 366,068 parts In-Stock

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$0.070

366,068

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Farnell

UK . 13,698 parts In-Stock

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$0.072

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$0.060

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$0.058

13,698

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$0.072

$0.060

$0.058

Element14

Singapore . 13,698 parts In-Stock

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$0.115

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$0.114

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$0.114

Flip Electronics (Authorized)

USA . 11,179 parts In-Stock

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EBV Elektronik

Germany . 9,000 parts In-Stock

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Chip1Stop

Japan . 745 parts In-Stock

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$0.077

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$0.060

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745

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$0.077

$0.060

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Distributors (In-Stock)

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Vyrian

USA . 1,971 parts In-Stock

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$0.054

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1,971

$0.054

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Greenchips

USA . 6,000 parts In-Stock

1+ parts

$0.058

100+ parts

$0.055

1k+ parts

$0.052

10k+ parts

$0.047

6,000

$0.058

$0.055

$0.052

$0.047

Digiode

USA . 1,336 parts In-Stock

1+ parts

$0.059

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1,336

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Flip Electronics

USA . 26,179 parts In-Stock

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SIE Connect GmbH - GreenChips

Germany . 9,000 parts In-Stock

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NAC Semi

USA . 6,000 parts In-Stock

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$0.285

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$0.285

Prism Electronics

USA . 2,672 parts In-Stock

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Semtec, LLC

USA . 20 parts In-Stock

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Corohmni

South Africa . 346 parts In-Stock

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$0.032

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$0.032

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Corphita

USA . 1,430 parts In-Stock

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$0.056

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Continental Prestige Electronics

USA . 456,060 parts In-Stock

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Perfect Parts

USA . 54,568 parts In-Stock

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Eastek

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Infinite Electronics LLP (Excess)

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Lixinc

USA . 6,674 parts In-Stock

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Kepictronics

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SupplyDigital Components

Austria . 5,977 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 2,518 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,200 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

Mexico . 385 parts In-Stock

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UHIMA Technologies

Türkiye . 297 parts In-Stock

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Resion (Excess)

USA . 99 parts In-Stock

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Overview

Discover the power of innovation with the HN2D02FUTW1T1G by Onsemi. This high-quality diode and rectifier offers unmatched performance and reliability, thanks to Onsemi's reputation for excellence in manufacturing. Ideal for a wide range of applications, this product provides customers with value, benefits, and advantages that set it apart from the competition. Experience the difference with the HN2D02FUTW1T1G and elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY package body material provides good insulation and protection for the diodes, ensuring stable performance and durability.

Surface Mount: YES

Surface mount capability allows for easy installation on circuit boards, saving space and simplifying assembly processes.

Maximum Reverse Recovery Time: 0.003 us

Fast reverse recovery time ensures efficient operation and helps prevent signal distortion in high-speed applications.

Maximum Reverse Current: 0.1 uA

Low reverse current minimizes power loss and improves overall efficiency of the diodes.

Reverse Test Voltage: 75 V

High reverse test voltage rating ensures reliable performance in reverse bias conditions, making the diodes suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environmental conditions without compromising performance.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop helps minimize power loss and maximize efficiency in forward bias operation.

Technical Specifications

Diodes & Rectifiers HN2D02FUTW1T1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SEPARATE, 3 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

3

No. of Phases:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

85 V

Maximum Reverse Current:

.1 uA

Maximum Reverse Recovery Time:

.003 us

Reverse Test Voltage:

75 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

HN2D02FUTW1T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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