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1SS403,H3F

Toshiba

1SS403,H3F by Toshiba

1SS403,H3F by Toshiba is a single rectifier diode with 200V reverse test voltage and 0.06us reverse recovery time. Ideal for high voltage applications, it has a max forward voltage of 1.2V and can handle up to 0.1A output current efficiently. With a small outline package style, it operates at temperatures up to 150°C.

Median Price

$0.270

Lifecycle Status

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Mouser Electronics

USA . 15,033 parts In-Stock

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$0.270

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$0.116

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$0.076

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$0.044

15,033

$0.270

$0.116

$0.076

$0.044

DigiKey

USA . 20,527 parts In-Stock

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$0.116

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$0.075

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Avnet

USA . 3,000 parts In-Stock

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Arrow

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Chip1Stop

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Nova Conductors

Japan . 700 parts In-Stock

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$0.068

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Vyrian

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Bristol Electronics

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VNN

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Ampacity Inc.

Singapore . 6,644 parts In-Stock

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$0.034

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Authorized Procurement Solutions

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Argo Parts USA

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Perfect Parts

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Netroflash

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$0.067

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$0.065

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Kepictronics

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Overview

Enhance your electronic projects with the 1SS403,H3F diode by Toshiba. Known for their superior quality and reliability, Toshiba's diodes and rectifiers are a top choice for high voltage applications. With a fast reverse recovery time of 0.06 us and a low reverse current of 1 uA, this rectifier diode offers exceptional performance. Its small outline package style and gull wing terminal form make it easy to use in a variety of designs. Trust Toshiba to deliver value and efficiency in every component - experience the difference in your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it suitable for various environments.

Config: SINGLE

The single configuration simplifies installation and reduces the chances of errors in circuit design.

Surface Mount: YES

The surface mount feature allows for easy and secure placement on PCBs, saving space and facilitating automated assembly processes.

Maximum Reverse Recovery Time: 0.06 us

The fast reverse recovery time ensures efficient and responsive performance in high-speed applications.

Maximum Reverse Current: 1 uA

The low reverse current minimizes power loss and ensures stable operation of the diode.

Package Shape: RECTANGULAR

The rectangular shape allows for easy handling and placement in circuit designs.

Reverse Test Voltage: 200 V

The high reverse test voltage provides reliable protection against reverse voltage spikes.

No. of Terminals: 2

The two terminals simplify wiring and connections, making it easy to integrate into circuits.

Application: HIGH VOLTAGE

The diode is designed for high voltage applications, ensuring robust performance in demanding environments.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance allows for use in a wide range of temperature conditions.

Terminal Position: DUAL

The dual terminal position allows for flexibility in circuit designs and connections.

Maximum Power Dissipation: 0.2 W

The low power dissipation helps in reducing heat buildup and improving overall efficiency.

Reference Standard: AEC-Q101

Compliant with the AEC-Q101 standard ensures high reliability for automotive applications.

Diode Type: RECTIFIER DIODE

The rectifier diode type allows for efficient conversion of alternating current to direct current in various electronic circuits.

Maximum Forward Voltage (VF): 1.2 V

The low forward voltage drop helps in minimizing power loss and improving energy efficiency.

Maximum Output Current: 0.1 A

The maximum output current rating ensures reliable performance for a range of applications.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connections in surface mounted applications.

Maximum Repetitive Peak Reverse Voltage: 250 V

The high repetitive peak reverse voltage rating ensures protection against voltage spikes in the circuit.

Maximum Non Repetitive Peak Forward Current: 2 A

The high non-repetitive peak forward current rating allows for handling short-term high current surges without damage.

Diode Element Material: SILICON

The silicon diode element material offers high conductivity and reliability for long-lasting performance.

Technical Specifications

Diodes & Rectifiers 1SS403,H3F attributes and parameters. Explore more Diodes & Rectifiers devices from Toshiba

Specs

Application:

HIGH VOLTAGE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-G2

Maximum Non Repetitive Peak Forward Current:

2 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.2 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

250 V

Maximum Reverse Current:

1 uA

Maximum Reverse Recovery Time:

.06 us

Reverse Test Voltage:

200 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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