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V62/09619-01XE

Texas Instruments

V62/09619-01XE by Texas Instruments

V62/09619-01XE clock driver by Texas Instruments features a propagation delay of 0.6 ns, 3.3V nominal voltage, and operates in a temperature range of -55 to 125°C. Ideal for applications requiring high-speed signal conditioning with differential inputs, this chip carrier package supports surface mount installation and offers 3 true outputs at up to 800 MHz.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,174 parts In-Stock

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Digiode

USA . 1,399 parts In-Stock

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1,399

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One Stop Electronics

USA . 1,203 parts In-Stock

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$8.000

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AZTECH Wire

Italy . 396 parts In-Stock

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$11.675

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Parana Technologies

USA . 226 parts In-Stock

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$14.889

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$15.318

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DigiPath Technology Company

USA . 2,374 parts In-Stock

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$16.394

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$15.083

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ChromeModa Solutions

Germany . 4,743 parts In-Stock

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$16.729

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$13.718

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IDEA Electronic Components Group

UK . 2,038 parts In-Stock

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$16.729

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$15.893

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$15.056

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2,038

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Component Stockers USA

USA . 350 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 22,565 parts In-Stock

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Microchip USA

USA . 5,414 parts In-Stock

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Corphita

USA . 583 parts In-Stock

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Overview

Elevate your electronic designs with the V62/09619-01XE clock driver and buffer by Texas Instruments. Known for their superior quality and reliability, Texas Instruments brings you a product that delivers exceptional performance in various applications. With fast propagation delay, differential input conditioning, and 3-state output characteristics, this chip carrier package offers unmatched value and benefits to customers looking for precision and efficiency in their projects. Discover the advantages of using this military-grade component and take your designs to the next level with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, ideal for electronic applications.

Propagation Delay At Nominal Supply: 0.6 ns

The low propagation delay ensures fast signal processing and minimal delay in clock signals.

Surface Mount: YES

Surface mount compatibility allows for easy and efficient PCB assembly.

Input Conditioning: DIFFERENTIAL

Differential input conditioning helps in reducing noise and ensuring reliable data transmission.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage is commonly used in electronic devices, ensuring compatibility with various systems.

Output Characteristics: 3-STATE

The 3-state output allows for high impedance state, which is useful for bus sharing and interfacing with multiple devices.

Temperature Grade: MILITARY

The military-grade temperature rating ensures reliability and performance in extreme environmental conditions.

Technical Specifications

Clock Drivers & Buffers V62/09619-01XE attributes and parameters. Explore more Clock Drivers & Buffers devices from Texas Instruments

Specs

Family:

1803

Input Conditioning:

DIFFERENTIAL

JESD-30 Code:

S-PQCC-N24

JESD-609 Code:

e4

Length:

4 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Inverted Outputs:

0

No. of Terminals:

24

No. of True Outputs:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC24,.16SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

.6 ns

Propagation Delay (tpd):

.6 ns

Qualification:

Not Qualified

Maximum Same Edge Skew (tskwd):

.1 ns

Maximum Seated Height:

1 mm

Sub-Category:

Clock Drivers

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4 mm

Minimum fmax:

800 MHz

Trade Compliance

V62/09619-01XE Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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