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TSL250

Texas Instruments

TSL250 by Texas Instruments

TSL250 by Texas Instruments is a 1.5mm linear output photo IC sensor with a single configuration. Operating b/w -25°C to 85°C, it requires a min supply voltage of 3V and nominal voltage of 5V. Ideal for amplifier applications, it features an infrared range and can handle a max on-state current of 0.01A.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,943 parts In-Stock

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Digiode

USA . 953 parts In-Stock

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953

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,782 parts In-Stock

1+ parts

$0.460

100+ parts

-

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$1.610

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1,782

$0.460

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$1.610

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DigiPath Technology Company

USA . 2,136 parts In-Stock

1+ parts

$0.507

100+ parts

$0.466

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2,136

$0.507

$0.466

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ChromeModa Solutions

Germany . 2,366 parts In-Stock

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$0.517

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$0.424

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2,366

$0.517

$0.424

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IDEA Electronic Components Group

UK . 2,004 parts In-Stock

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$0.517

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$0.465

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2,004

$0.517

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$0.465

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One Stop Electronics

USA . 129 parts In-Stock

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$19.100

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129

$19.100

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AZTECH Wire

Italy . 692 parts In-Stock

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$19.294

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Corphita

USA . 4,738 parts In-Stock

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Overview

Discover the cutting-edge technology of the TSL250 by Texas Instruments, a top-of-the-line Photo IC Sensor that sets the standard for quality and precision in the industry. With its linear output and infrared range capabilities, this sensor is perfect for applications requiring accurate amplification. From through hole mounting to its compact size, the TSL250 offers unmatched value and benefits for customers seeking reliable optoelectronic solutions. Trust Texas Instruments to deliver superior performance in every aspect with the TSL250.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration simplifies installation and setup, making it user-friendly.

Size: 1.5 mm

Compact size allows for easy integration into various devices or applications.

Optoelectronic Type: LINEAR OUTPUT PHOTO IC

Linear output provides accurate and reliable data, making it suitable for precise measurements.

Minimum Supply Voltage: 3 V

Low minimum supply voltage helps in reducing power consumption and extending battery life.

Application: AMPLIFIER

Designed specifically for amplification needs, ensuring high signal fidelity and quality.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows for reliable performance even in harsh environmental conditions.

Shape: RECTANGULAR

Rectangular shape provides versatility in mounting options and easy integration into different devices.

Minimum Operating Temperature: -25 °C

Wide range of minimum operating temperature ensures functionality in both cold and hot environments.

Infrared (IR) Range: YES

Infrared range allows for detection and measurement of IR signals, expanding the range of applications.

Nominal Supply Voltage: 5 V

Standard nominal supply voltage for compatibility with various systems and devices.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mount provides sturdy and reliable installation, ideal for applications that require stability.

Maximum On State Current: 0.01 A

Low maximum on state current helps in reducing heat generation and improving overall efficiency.

Technical Specifications

Photo IC Sensors TSL250 attributes and parameters. Explore more Photo IC Sensors devices from Texas Instruments

Specs

Application:

AMPLIFIER

Configuration:

SINGLE

Infrared (IR) Range:

YES

Mounting Feature:

No. of Functions:

1

Maximum On State Current:

.01 A

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Optoelectronic Type:

Shape:

RECTANGULAR

Size:

1.5 mm

Sub-Category:

Photo ICs

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

5 V

Trade Compliance

TSL250 Optoelectronics trade compliance attributes, and parameters.

NSN

5961-01-470-3368, 5961014703368

NIIN

014703368

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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