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TPS73028DBVRG4

Texas Instruments

TPS73028DBVRG4 by Texas Instruments

TPS73028DBVRG4 by Texas Instruments is a BICMOS technology LDO regulator with 2.8V output voltage, 0.2A output current, and 0.21V dropout voltage. Ideal for applications requiring a fixed positive single output regulator in compact designs with operating temperatures from -40 to 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 81,200 parts In-Stock

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Vyrian

USA . 6,426 parts In-Stock

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Euro-Tech

UK . 2,730 parts In-Stock

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Digiode

USA . 2,598 parts In-Stock

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Parana Technologies

USA . 549 parts In-Stock

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$7.813

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$8.365

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549

$7.813

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ChromeModa Solutions

Germany . 5,031 parts In-Stock

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$8.779

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$7.199

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IDEA Electronic Components Group

UK . 1,565 parts In-Stock

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$8.779

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$8.340

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$7.901

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One Stop Electronics

USA . 774 parts In-Stock

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$16.500

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AZTECH Wire

Italy . 701 parts In-Stock

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$18.609

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Corphita

USA . 4,654 parts In-Stock

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Kepictronics

USA . 3,880 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,880 parts In-Stock

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DigiPath Technology Company

USA . 2,038 parts In-Stock

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$7.915

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Microchip USA

USA . 1,623 parts In-Stock

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Overview

Enhance your electronic designs with the TPS73028DBVRG4 from Texas Instruments, a leading manufacturer known for its high-quality components. This Fixed Regulator - Positive Single Output LDO offers reliable performance and precision. Perfect for a wide range of applications, this compact regulator provides a stable output voltage, ensuring optimal power management. Trust Texas Instruments for superior products that deliver value and efficiency to your projects. Upgrade your designs today with the TPS73028DBVRG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the regulator, ensuring long-lasting performance.

Maximum Dropout Voltage-1: 0.21 V

Low dropout voltage allows the regulator to operate effectively even when the input voltage is close to the output voltage, enhancing efficiency.

Surface Mount: YES

Surface mount capability makes it easy to integrate this regulator into compact circuit designs, saving space and simplifying assembly.

Operating Temperature (TJ-Max): 125 °C

Wide operating temperature range ensures reliable performance in various environmental conditions, making it suitable for a range of applications.

Technology: BICMOS

BICMOS technology combines the benefits of bipolar and CMOS technologies, offering high performance and low power consumption in this regulator.

Nominal Output Voltage-1: 2.8 V

Stable and precise output voltage ensures consistent performance of connected devices, making this regulator ideal for sensitive applications.

Technical Specifications

Fixed Regulators - Positive Single Output LDO TPS73028DBVRG4 attributes and parameters. Explore more Fixed Regulators - Positive Single Output LDO devices from Texas Instruments

Specs

Adjustability:

FIXED

Maximum Dropout Voltage-1:

.21 V

Nominal Dropout Voltage-1:

.12 V

Maximum Input Voltage Absolute:

6 V

Maximum Input Voltage:

5.5 V

Minimum Input Voltage:

3.01 V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

5

Operating Temperature (TJ-Max):

125 Cel

Operating Temperature (TJ-Min):

-40 Cel

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current-1:

.2 A

Maximum Output Voltage-1:

2.856 V

Minimum Output Voltage-1:

2.744 V

Nominal Output Voltage-1:

2.8 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Qualification Status:

Not Qualified

Maximum Seated Height:

1.45 mm

Sub-Category:

Other Regulators

Surface Mount:

YES

Technology:

BICMOS

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Maximum Voltage Tolerance:

2 %

Width:

1.6 mm

Trade Compliance

TPS73028DBVRG4 Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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