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TLVH432BIDBZTG4

Texas Instruments

TLVH432BIDBZTG4 by Texas Instruments

TLVH432BIDBZTG4 by Texas Instruments is a voltage reference IC with a min output voltage of 1.234 V and max output current of 0.08 A. It is ideal for industrial applications requiring precise voltage regulation, operating b/w -40 to 85 °C, in a small outline package with surface mount capability.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,657 parts In-Stock

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Digiode

USA . 1,649 parts In-Stock

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One Stop Electronics

USA . 1,076 parts In-Stock

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$1.500

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$1.500

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Ampacity Inc.

Singapore . 272 parts In-Stock

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$1.500

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272

$1.500

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Semicontronic

India . 452 parts In-Stock

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$7.500

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$7.312

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$7.275

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452

$7.500

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$7.275

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Parana Technologies

USA . 2,016 parts In-Stock

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$15.306

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$15.701

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2,016

$15.306

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$15.701

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DigiPath Technology Company

USA . 636 parts In-Stock

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$16.854

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$15.506

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636

$16.854

$15.506

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ChromeModa Solutions

Germany . 4,259 parts In-Stock

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$17.198

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$14.102

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IDEA Electronic Components Group

UK . 1,878 parts In-Stock

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$17.198

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$16.338

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$15.478

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1,878

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$15.478

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AZTECH Wire

Italy . 866 parts In-Stock

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$18.216

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QUARKTWIN TECHNOLOGY LTD

USA . 25,660 parts In-Stock

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Microchip USA

USA . 4,912 parts In-Stock

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Corphita

USA . 1,650 parts In-Stock

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Corohmni

South Africa . 343 parts In-Stock

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Overview

Experience the unmatched quality of the TLVH432BIDBZTG4 by Texas Instruments, a top-tier manufacturer renowned for delivering cutting-edge solutions in voltage references. This versatile product is perfect for a wide range of applications, offering customers reliability and precision without compromise. With its superior performance and innovative design, the TLVH432BIDBZTG4 provides exceptional value, benefits, and advantages that set it apart from the competition. Trust Texas Instruments to deliver the best in voltage reference technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and long-term reliability.

Surface Mount: YES

Ease of installation on PCBs, allowing for efficient and space-saving design.

Trim or Adjustable Output (V): YES

Allows for fine tuning of the output voltage, making it versatile for various applications.

Maximum Operating Temperature: 85 °C

Can operate reliably in high-temperature environments, ideal for industrial use.

Minimum Output Voltage: 1.234 V

Provides a precise and stable output voltage for consistent performance.

Minimum Operating Temperature: -40 °C

Can function in extreme low-temperature conditions, suitable for a wide range of environments.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Compact packaging allows for efficient use of space on PCBs, especially in applications with size constraints.

Technology: BIPOLAR

Bipolar technology offers high accuracy and stability in voltage references, ensuring precise output.

Technical Specifications

Voltage References TLVH432BIDBZTG4 attributes and parameters. Explore more Voltage References devices from Texas Instruments

Specs

Additional Features:

OUTPUT VOLTAGE ADJUSTABLE FROM 1.24V TO 18V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e4

Length:

2.92 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

.08 A

Maximum Output Voltage:

1.246 V

Minimum Output Voltage:

1.234 V

Nominal Output Voltage:

1.24 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TO-236

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.12 mm

Sub-Category:

Voltage References

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

1.24 V

Surface Mount:

YES

Technology:

BIPOLAR

Max Voltage Temp Coef:

129.032 ppm/Cel

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trim or Adjustable Output (V):

YES

Width (mm):

1.3 mm

Trade Compliance

TLVH432BIDBZTG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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