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TLVH432BIDBZT

Texas Instruments

TLVH432BIDBZT by Texas Instruments

TLVH432BIDBZT by Texas Instruments is a voltage reference IC with adjustable output (1.234-1.246V) and max output current of 0.08A. Ideal for industrial applications, it operates b/w -40 to 85°C, has a small outline package style, and supports surface mount installation.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 8,027 parts In-Stock

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Digiode

USA . 863 parts In-Stock

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863

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One Stop Electronics

USA . 775 parts In-Stock

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$1.500

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775

$1.500

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Semicontronic

India . 741 parts In-Stock

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$5.500

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$5.362

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$5.335

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741

$5.500

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$5.335

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Ampacity Inc.

Singapore . 1,041 parts In-Stock

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$7.500

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$7.500

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AZTECH Wire

Italy . 401 parts In-Stock

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$17.724

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401

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Parana Technologies

USA . 2,000 parts In-Stock

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$19.014

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$1,765.735

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$17.113

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$19.014

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$17.113

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DigiPath Technology Company

USA . 1,874 parts In-Stock

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$20.937

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$20.937

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ChromeModa Solutions

Germany . 3,065 parts In-Stock

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$21.364

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$17.518

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$21.364

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IDEA Electronic Components Group

UK . 1,140 parts In-Stock

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$21.364

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$20.296

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$19.228

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$21.364

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QUARKTWIN TECHNOLOGY LTD

USA . 19,426 parts In-Stock

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Microchip USA

USA . 5,979 parts In-Stock

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Corphita

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Corohmni

South Africa . 226 parts In-Stock

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Overview

Enhance your electronic designs with the TLVH432BIDBZT from Texas Instruments, a leading manufacturer known for its quality and reliability. As a voltage reference in a compact rectangular package, this versatile component offers precise output voltage control and thermal stability for a wide range of industrial applications. With a trimmable output and durable plastic body, this three-terminal device provides consistent performance even in harsh environments. Trust Texas Instruments to deliver superior products that meet your design needs with efficiency and excellence. Elevate your projects with the TLVH432BIDBZT and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for easy handling and protection of internal components.

Surface Mount: YES

Allows for easy and convenient installation on PCBs.

Trim or Adjustable Output (V): YES

Provides flexibility in output voltage adjustment for customized applications.

Maximum Operating Temperature: 85 °C

Can withstand high temperature environments, suitable for industrial applications.

Minimum Output Voltage: 1.234 V

Provides a precise and stable output voltage for consistent performance.

Minimum Operating Temperature: -40 °C

Operates reliably in cold temperature conditions, expanding usability.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides excellent conductivity and corrosion resistance for reliable connections.

Maximum Output Current: 0.08 A

Capable of delivering sufficient current for low-power applications.

Technology: BIPOLAR

Features bipolar technology for high precision and low noise output.

Technical Specifications

Voltage References TLVH432BIDBZT attributes and parameters. Explore more Voltage References devices from Texas Instruments

Specs

Additional Features:

OUTPUT VOLTAGE ADJUSTABLE FROM 1.24V TO 18V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e4

Length:

2.92 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

.08 A

Maximum Output Voltage:

1.246 V

Minimum Output Voltage:

1.234 V

Nominal Output Voltage:

1.24 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TO-236

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.12 mm

Sub-Category:

Voltage References

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

1.24 V

Surface Mount:

YES

Technology:

BIPOLAR

Max Voltage Temp Coef:

129.032 ppm/Cel

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trim or Adjustable Output (V):

YES

Width (mm):

1.3 mm

Trade Compliance

TLVH432BIDBZT Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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