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TLV3702CDGKG4

Texas Instruments

TLV3702CDGKG4 by Texas Instruments

TLV3702CDGKG4 by Texas Instruments is a CMOS comparator with 2 functions, featuring a max input offset voltage of 7000 uV and max average bias current of 0.0015 uA. Ideal for applications requiring push-pull output type, it operates b/w -40 to 125 °C and has a small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,718 parts In-Stock

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Digiode

USA . 4,398 parts In-Stock

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One Stop Electronics

USA . 805 parts In-Stock

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$0.410

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805

$0.410

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Parana Technologies

USA . 1,227 parts In-Stock

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$5.606

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$6.402

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$5.606

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DigiPath Technology Company

USA . 87 parts In-Stock

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$6.173

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87

$6.173

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ChromeModa Solutions

Germany . 607 parts In-Stock

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$6.299

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$5.165

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607

$6.299

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IDEA Electronic Components Group

UK . 599 parts In-Stock

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$6.299

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$5.669

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599

$6.299

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$5.669

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AZTECH Wire

Italy . 536 parts In-Stock

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$14.623

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536

$14.623

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Corphita

USA . 3,771 parts In-Stock

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Microchip USA

USA . 1,937 parts In-Stock

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Overview

Upgrade your applications with the TLV3702CDGKG4 by Texas Instruments, a top-quality comparator designed to enhance performance and reliability. With Texas Instruments' reputation for excellence in manufacturing, this product offers precision and accuracy for a wide range of uses. From industrial automation to consumer electronics, this comparator delivers value by providing fast response times, low power consumption, and reliable operation. Elevate your projects with the TLV3702CDGKG4 and experience the benefits of superior quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, suitable for various applications.

Maximum Input Offset Voltage: 7000 uV

Low input offset voltage ensures accurate comparison and enhanced precision in voltage measurement.

Maximum Average Bias Current (IIB): 0.0015 uA

Low bias current minimizes errors in signal comparison and ensures reliable operation.

Surface Mount: YES

Surface mount technology allows for easy and space-efficient integration on circuit boards.

Nominal Supply Voltage / Vsup (V): 2.7

The nominal supply voltage of 2.7V is ideal for low power applications and helps in reducing energy consumption.

Maximum Supply Voltage Limit: 17 V

With a maximum supply voltage limit of 17V, this comparator can handle a wide range of input voltages without damage.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this comparator suitable for battery-operated devices.

Amplifier Type: COMPARATOR

Being a comparator amplifier type, this product is specifically designed for comparing input voltages and providing a digital output based on the comparison.

Technical Specifications

Comparators TLV3702CDGKG4 attributes and parameters. Explore more Comparators devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

±1.25/±8/2.5/16 V

Total Functions:

2

Sub-Category:

Comparators

Output Type:

Push-Pull

Performance Specifications

Maximum Input Offset Voltage:

7 mV

Peak Bias Current:

1.5 nA

Maximum Bias Current (IIB) @25 °C:

100 pA

Operational Characteristics

Maximum Supply Current:

1.6 μA

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

17 V

Nominal Negative Supply Voltage (Vsup):

0 V

Maximum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Reflow Peak Time Limit:

30 s

Peak Reflow Temperature:

260 °C (500 °F)

Nominal Response Time:

240 µs

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

Package Shape:

Package Type:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

TLV3702CDGKG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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