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TLV3494AIDRG4

Texas Instruments

TLV3494AIDRG4 by Texas Instruments

TLV3494AIDRG4 by Texas Instruments is a CMOS Comparator with 15000uV Max Input Offset Voltage, 0.00001uA Max Average Bias Current, and 12000ns Nominal Response Time. Ideal for automotive applications due to its small outline package and push-pull output type.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,519 parts In-Stock

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Digiode

USA . 1,609 parts In-Stock

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One Stop Electronics

USA . 1,329 parts In-Stock

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$1.410

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$1.410

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Parana Technologies

USA . 901 parts In-Stock

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$1.575

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$2.214

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DigiPath Technology Company

USA . 311 parts In-Stock

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$1.735

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IDEA Electronic Components Group

UK . 1,359 parts In-Stock

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$1.770

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$1.593

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ChromeModa Solutions

Germany . 357 parts In-Stock

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$1.770

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$1.451

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Ampacity Inc.

Singapore . 310 parts In-Stock

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$4.410

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AZTECH Wire

Italy . 782 parts In-Stock

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$15.885

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Component Stockers USA

USA . 241 parts In-Stock

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$99.990

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Corphita

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Microchip USA

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Overview

Discover the innovative TLV3494AIDRG4 by Texas Instruments, a top-tier manufacturer known for cutting-edge technology. This comparator offers unmatched precision and reliability for a wide range of applications. With its compact size and low power consumption, this product provides exceptional value to customers looking for superior performance in their designs. Trust Texas Instruments to deliver high-quality solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Maximum Input Offset Voltage: 15000 uV

High maximum input offset voltage ensures accurate and precise measurements.

Maximum Average Bias Current (IIB): 0.00001 uA

Low average bias current ensures minimal interference with the input signal.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards.

No. of Functions: 4

Having 4 functions in one device saves space and cost in the circuit design.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard nominal supply voltage of 5V, compatible with many systems.

Power Supplies (V): 2/5

Supports multiple power supply options for flexibility in system design.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for use in various environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Technical Specifications

Comparators TLV3494AIDRG4 attributes and parameters. Explore more Comparators devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

2/5 V

Total Functions:

4

Sub-Category:

Comparators

Output Type:

Push-Pull

Performance Specifications

Maximum Input Offset Voltage:

15 mV

Peak Bias Current:

10 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Operational Characteristics

Maximum Supply Current:

1.2 μA

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

5.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Nominal Response Time:

12 µs

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Type:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TLV3494AIDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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