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TLE2144AMJB

Texas Instruments

TLE2144AMJB by Texas Instruments

TLE2144AMJB by Texas Instruments is a MIL-STD-883 compliant operational amplifier with 4 functions, 3200uV max input offset voltage, and 108dB nominal CMRR. Ideal for military applications due to its -55 to 125 °C operating temp range, VOLTAGE-FEEDBACK architecture, and 6000 kHz unity gain bandwidth.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,557 parts In-Stock

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Digiode

USA . 1,861 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 803 parts In-Stock

1+ parts

$3.033

100+ parts

$281.671

1k+ parts

$2.730

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803

$3.033

$281.671

$2.730

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DigiPath Technology Company

USA . 1,117 parts In-Stock

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$3.340

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$3.340

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ChromeModa Solutions

Germany . 3,688 parts In-Stock

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$3.408

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$2.795

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$3.408

$2.795

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IDEA Electronic Components Group

UK . 674 parts In-Stock

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$3.408

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$3.067

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One Stop Electronics

USA . 915 parts In-Stock

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$7.410

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915

$7.410

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AZTECH Wire

Italy . 519 parts In-Stock

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$9.198

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519

$9.198

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Ampacity Inc.

Singapore . 744 parts In-Stock

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$9.410

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Component Stockers USA

USA . 293 parts In-Stock

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$99.990

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Corphita

USA . 3,167 parts In-Stock

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Microchip USA

USA . 2,569 parts In-Stock

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Overview

Unlock unparalleled precision and performance with the TLE2144AMJB by Texas Instruments, a top-tier manufacturer known for quality and reliability. This operational amplifier (Op Amp) offers superior common mode rejection, high voltage gain, and military-grade screening level. Ideal for applications requiring high accuracy and stability, this product guarantees unmatched value and benefits for customers seeking top-notch performance in their projects. Experience the difference with Texas Instruments' TLE2144AMJB!

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material provides durability and reliability, making this operational amplifier suitable for a wide range of applications.

Maximum Input Offset Voltage: 3200 uV

The low maximum input offset voltage ensures accurate and precise signal processing, making this operational amplifier ideal for high-precision applications.

Maximum Average Bias Current (IIB): -1.8 uA

The low bias current helps minimize power consumption and ensures stable operation, making this operational amplifier energy-efficient.

Nominal Common Mode Reject Ratio: 108 dB

The high common mode reject ratio ensures better rejection of common mode noise, resulting in cleaner and more accurate output signals.

Frequency Compensation: YES

The presence of frequency compensation helps stabilize the amplifier and improve its overall performance, making it suitable for dynamic signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLE2144AMJB attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5/±15 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

6 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

108 dB

Minimum Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

3200 uV

Minimum Voltage Gain:

5000

Minimum Slew Rate:

30 V/us

Nominal Slew Rate:

45 V/us

Maximum Input Offset Current (IIO):

100 nA

Peak Bias Current:

-1.8 uA

Maximum Bias Current (IIB) @25 °C:

1.5 uA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

22 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-22 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

18 mA

Physical Characteristics

Length:

0.77 in (19.56 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

14

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin/Lead

Package Body Material:

Ceramic, Glass-Sealed

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

MIL-STD-883

Standards

JESD-30 Code:

R-GDIP-T14

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP14,.3

Trade Compliance

TLE2144AMJB Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

NSN

5962-01-231-2051, 5962012312051

NIIN

012312051

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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