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TLE2141MJGB

Texas Instruments

TLE2141MJGB by Texas Instruments

TLE2141MJGB by Texas Instruments is a MIL-STD-883 compliant operational amplifier with 1500uV max input offset voltage, 108dB CMRR, and 27V/us min slew rate. Ideal for military applications due to its ceramic package, it operates in -55 to 125 °C range with +/-15V supplies.

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4

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1k+

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Vyrian

USA . 2,256 parts In-Stock

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Digiode

USA . 2,113 parts In-Stock

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Connector Distribution Corp

USA . 49 parts In-Stock

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Right Parts Inc.

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One Stop Electronics

USA . 714 parts In-Stock

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$0.410

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Parana Technologies

USA . 2,309 parts In-Stock

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$4.284

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DigiPath Technology Company

USA . 1,150 parts In-Stock

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$4.718

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$4.340

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ChromeModa Solutions

Germany . 3,935 parts In-Stock

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$4.814

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$3.947

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IDEA Electronic Components Group

UK . 1,213 parts In-Stock

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AZTECH Wire

Italy . 272 parts In-Stock

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Corphita

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Microchip USA

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Kepictronics

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Overview

Experience the unparalleled quality and reliability of Texas Instruments with the TLE2141MJGB operational amplifier. Designed to meet MIL-STD-883 screening levels, this amplifier offers exceptional performance in a wide range of applications. With a nominal unity gain bandwidth of 6000 kHz and a minimum slew rate of 27 V/us, this op amp delivers precision and efficiency like no other. Trust in Texas Instruments for superior technology and innovation that surpasses all expectations. Elevate your projects with the TLE2141MJGB and experience the difference today.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides durability and protection for the internal components, ensuring long-term reliability.

Maximum Input Offset Voltage: 1500 uV

Low input offset voltage ensures accurate and precise signal processing.

Nominal Common Mode Reject Ratio: 108 dB

High common mode rejection ratio helps in reducing noise and interference in the output signal.

Nominal Supply Voltage / Vsup (V): 15

Optimal supply voltage ensures stable operation and performance of the amplifier.

Minimum Slew Rate: 27 V/us

Fast slew rate enables rapid response to input signal changes, making it suitable for applications requiring high speed.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for operation in harsh environments without compromising performance.

Nominal Unity Gain Bandwidth: 6000 kHz

High unity gain bandwidth ensures high-frequency response and accurate signal reproduction.

Technology: BIPOLAR

Bipolar technology offers low input bias current and high input impedance, suitable for precision applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifiers are versatile and widely used for various signal processing applications due to their high gain and stability.

Technical Specifications

Operational Amplifiers (Op Amps) TLE2141MJGB attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5/±15 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

6 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

108 dB

Minimum Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

1500 uV

Minimum Voltage Gain:

5000

Minimum Slew Rate:

27 V/us

Nominal Slew Rate:

45 V/us

Maximum Input Offset Current (IIO):

100 nA

Peak Bias Current:

1.5 uA

Maximum Bias Current (IIB) @25 °C:

1.5 uA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

22 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-22 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

4.4 mA

Physical Characteristics

Length:

0.378 in (9.6 mm)

Width:

0.263 in (6.67 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Ceramic, Glass-Sealed

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

MIL-STD-883

Standards

JESD-30 Code:

R-GDIP-T8

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

TLE2141MJGB Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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