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TLE2072MJGB

Texas Instruments

TLE2072MJGB by Texas Instruments

TLE2072MJGB by Texas Instruments is a MIL-STD-883 compliant operational amplifier with 2 functions, offering low bias current (0.06 uA) and high common mode rejection ratio (89 dB). Ideal for military applications due to its wide temperature range (-55 to 125 °C) and BIFET technology.

Median Price

$26.813

Lifecycle Status

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Rochester

USA . 261 parts In-Stock

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-

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$21.450

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$19.190

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$18.060

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$18.060

DigiKey

USA . 261 parts In-Stock

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$28.230

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Verical

USA . 138 parts In-Stock

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$26.813

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$26.813

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Nova Conductors

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$15.109

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Digiode

USA . 2,101 parts In-Stock

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$17.119

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Vyrian

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DigiKey Marketplace

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Parana Technologies

USA . 1,189 parts In-Stock

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$1.325

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$2.063

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1,189

$1.325

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$2.063

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ChromeModa Solutions

Germany . 2,453 parts In-Stock

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$1.489

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$1.221

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$1.489

$1.221

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IDEA Electronic Components Group

UK . 571 parts In-Stock

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$1.489

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$1.340

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$1.489

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AZTECH Wire

Italy . 851 parts In-Stock

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Continental Prestige Electronics

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$14.807

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Netroflash

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$14.807

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Ampacity Inc.

Singapore . 65 parts In-Stock

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$15.930

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Corphita

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$16.218

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QUARKTWIN TECHNOLOGY LTD

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Argo Parts USA

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DigiPath Technology Company

USA . 739 parts In-Stock

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$1.342

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Overview

Experience superior performance and reliability with the TLE2072MJGB by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality operational amplifiers for various applications. The TLE2072MJGB offers customers unmatched value with its high precision and low bias current, making it ideal for military-grade operations. Trust Texas Instruments to provide you with the best-in-class components for your electronic designs.

Feature Benefit Bullets

Package Body Material:

CERAMIC, GLASS-SEALED. Provides durability and reliability for long-term use.

Maximum Input Offset Voltage:

10500 uV. Ensures accurate and precise signal processing.

Maximum Average Bias Current (IIB):

0.06 uA. Offers low power consumption for efficiency.

No. of Functions:

2. Provides versatility in circuit design and functionality.

Screening Level:

MIL-STD-883. Indicates high-quality manufacturing standards and reliability.

Package Shape:

RECTANGULAR. Allows for easy integration into various electronic devices.

Nominal Common Mode Reject Ratio:

89 dB. Ensures minimal interference for clear output signals.

Nominal Supply Voltage / Vsup (V):

5. Offers compatibility with a wide range of power sources.

Power Supplies (V):

+-5/+-15. Provides flexibility in power requirements for different applications.

No. of Terminals:

8. Enables easy connection and setup in circuits.

Maximum Input Offset Current (IIO):

0.0001 uA. Ensures minimal input error for accurate performance.

Package Style (Meter):

IN-LINE. Allows for space-saving and compact circuit design.

Minimum Slew Rate:

18 V/us. Enables fast response time for dynamic signal processing.

Maximum Supply Voltage Limit:

19 V. Offers protection against overvoltage situations.

Maximum Operating Temperature:

125 °C. Provides reliability in extreme temperature conditions.

Maximum Bias Current (IIB) @25°C:

0.000175 uA. Ensures stable performance under varying temperatures.

Frequency Compensation:

YES. Improves stability and overall performance.

Minimum Voltage Gain:

7900. Provides sufficient amplification for weak signals.

Minimum Operating Temperature:

55 °C. Allows for operation in harsh environments.

Terminal Finish:

Tin/Lead (Sn/Pb). Ensures proper connectivity and conductivity.

Terminal Position:

DUAL. Facilitates easy installation and wiring.

Maximum Seated Height:

5.08 mm. Enables compact and low-profile circuit design.

Width:

7.62 mm. Fits easily in standard circuit layouts.

Length:

9.58 mm. Compact size for versatile application.

Temperature Grade:

MILITARY. Indicates ruggedness and reliability for demanding conditions.

Low-Bias:

YES. Provides accurate and stable performance with minimal bias.

Maximum Negative Supply Voltage Limit:

19 V. Ensures safe operation within voltage specifications.

Nominal Unity Gain Bandwidth:

9400 kHz. Supports high-frequency signal processing.

Minimum Common Mode Reject Ratio:

80 dB. Reduces noise and interference for clean output signals.

Technology:

BIFET. Combines the advantages of bipolar and CMOS technologies for optimal performance.

Terminal Form:

THROUGH-HOLE. Facilitates easy soldering and installation.

Amplifier Type:

OPERATIONAL AMPLIFIER. Ideal for various signal processing applications.

Maximum Supply Current:

3.9 mA. Ensures efficient power usage for extended operation.

Nominal Negative Supply Voltage (Vsup):

5 V. Supports dual power supply configurations.

Architecture:

VOLTAGE-FEEDBACK. Provides stable and accurate voltage amplification.

Packing Method:

TUBE. Offers convenient and organized storage and transportation.

Nominal Slow Rate:

35 V/us. Supports fast and dynamic signal processing.

Terminal Pitch:

2.54 mm. Allows for easy connectivity and compatibility with standard components.

Technical Specifications

Operational Amplifiers (Op Amps) TLE2072MJGB attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIFET

Power Supply:

±5/±15 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

9.4 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

89 dB

Minimum Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

10500 uV

Minimum Voltage Gain:

7900

Minimum Slew Rate:

18 V/us

Nominal Slew Rate:

35 V/us

Maximum Input Offset Current (IIO):

100 pA

Peak Bias Current:

60 nA

Maximum Bias Current (IIB) @25 °C:

175 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

19 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-19 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

3.9 mA

Physical Characteristics

Length:

0.377 in (9.58 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin/Lead

Package Body Material:

Ceramic, Glass-Sealed

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

MIL-STD-883

Standards

JESD-30 Code:

R-GDIP-T8

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

TLE2072MJGB Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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