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TLE2071QDRG4Q1

Texas Instruments

TLE2071QDRG4Q1 by Texas Instruments

TLE2071QDRG4Q1 by Texas Instruments is an Operational Amplifier with 9000uV Max Input Offset Voltage, 89dB CMRR, and 20V/us Min Slew Rate. Ideal for automotive applications due to AEC-Q100 screening, BIFET technology, and low-bias design. Package: PLASTIC/EPOXY, Surface Mount: YES.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 7,724 parts In-Stock

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Digiode

USA . 4,948 parts In-Stock

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One Stop Electronics

USA . 564 parts In-Stock

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$2.410

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Parana Technologies

USA . 1,626 parts In-Stock

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$6.512

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$7.256

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ChromeModa Solutions

Germany . 6,247 parts In-Stock

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$7.317

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IDEA Electronic Components Group

UK . 379 parts In-Stock

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AZTECH Wire

Italy . 855 parts In-Stock

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$12.354

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QUARKTWIN TECHNOLOGY LTD

USA . 8,016 parts In-Stock

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Microchip USA

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Corphita

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DigiPath Technology Company

USA . 1,318 parts In-Stock

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Overview

Experience top-notch performance and reliability with the TLE2071QDRG4Q1 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments offers operational amplifiers that excel in a wide range of applications. With features like low bias current, high common mode rejection ratio, and an automotive grade temperature range, this op amp provides exceptional value for your projects. Trust in the quality and precision of Texas Instruments to deliver superior solutions for your circuit design needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ensuring longevity and ease of handling.

Maximum Input Offset Voltage: 9000 uV

The high maximum input offset voltage allows for accurate signal processing with minimal error, making it suitable for precision applications.

Maximum Average Bias Current (IIB): 0.06 uA

The low bias current results in minimal power consumption and reduced heating, enhancing the efficiency of the operational amplifier.

Surface Mount: YES

Being surface mountable simplifies the assembly process and enables compact designs, making it ideal for space-constrained applications.

Nominal Common Mode Reject Ratio: 89 dB

The high common mode reject ratio ensures that unwanted noise and interference are minimized, leading to clean and accurate signal output.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V is commonly used and easily accessible, making it compatible with a wide range of power sources.

Nominal Unity Gain Bandwidth: 9400 kHz

The high unity gain bandwidth indicates that the operational amplifier can handle fast-changing signals accurately, making it suitable for high-frequency applications.

Technology: BIFET

The BIFET technology combines the advantages of bipolar and CMOS transistors, offering high input impedance and low input current, resulting in improved performance.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, this product is designed for versatile signal processing tasks in various electronic circuits, providing amplification and signal conditioning capabilities.

Technical Specifications

Operational Amplifiers (Op Amps) TLE2071QDRG4Q1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIFET

Power Supply:

±2.25/±19/4.5/38 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

9.4 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

89 dB

Input Offset Voltage Limit:

9000 uV

Minimum Voltage Gain:

7940

Minimum Slew Rate:

20 V/us

Nominal Slew Rate:

35 V/us

Maximum Input Offset Current (IIO):

20 nA

Peak Bias Current:

60 nA

Maximum Bias Current (IIB) @25 °C:

175 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

19 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-19 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

2.2 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLE2071QDRG4Q1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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