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TLE2062ACDG4

Texas Instruments

TLE2062ACDG4 by Texas Instruments

TLE2062ACDG4 by Texas Instruments is a dual operational amplifier with low bias current (0.002 uA) and micropower feature. It operates at a wide temperature range (0-70 °C) and offers high common mode rejection ratio (90 dB). Ideal for applications requiring precise signal amplification in commercial-grade electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,448 parts In-Stock

1+ parts

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4,448

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Digiode

USA . 3,492 parts In-Stock

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3,492

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,189 parts In-Stock

1+ parts

$4.999

100+ parts

-

1k+ parts

$5.549

10k+ parts

-

1,189

$4.999

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$5.549

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DigiPath Technology Company

USA . 845 parts In-Stock

1+ parts

$5.505

100+ parts

$5.064

1k+ parts

-

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845

$5.505

$5.064

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ChromeModa Solutions

Germany . 6,242 parts In-Stock

1+ parts

$5.617

100+ parts

$4.606

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-

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6,242

$5.617

$4.606

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IDEA Electronic Components Group

UK . 142 parts In-Stock

1+ parts

$5.617

100+ parts

-

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$5.055

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142

$5.617

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$5.055

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One Stop Electronics

USA . 1,340 parts In-Stock

1+ parts

$7.410

100+ parts

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1,340

$7.410

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AZTECH Wire

Italy . 685 parts In-Stock

1+ parts

$8.491

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685

$8.491

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Corphita

USA . 2,869 parts In-Stock

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2,869

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Microchip USA

USA . 1,396 parts In-Stock

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1,396

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Overview

Experience the superior performance and reliability of the Texas Instruments TLE2062ACDG4 operational amplifier. With a low input offset voltage, micropower design, and high common mode rejection ratio, this op amp is perfect for a wide range of applications in audio equipment, instrumentation, and control systems. Trust in Texas Instruments' reputation for quality and innovation to deliver unmatched value and precision in your designs. Elevate your projects with the TLE2062ACDG4 and unlock new possibilities in amplification and signal processing.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring long-term reliability.

Maximum Input Offset Voltage: 4900 uV

Low input offset voltage ensures accuracy in signal amplification and processing.

Maximum Average Bias Current (IIB): 0.002 uA

Low bias current minimizes power consumption and improves overall efficiency.

Nominal Common Mode Reject Ratio: 90 dB

High common mode rejection ratio ensures excellent noise immunity and signal integrity.

Nominal Supply Voltage / Vsup (V): 5

Operates on a standard 5V supply voltage, making it compatible with many systems.

Minimum Slew Rate: 2.5 V/us

Fast slew rate enables rapid response to input signals, ideal for applications requiring quick signal processing.

Nominal Unity Gain Bandwidth: 1300 kHz

High unity gain bandwidth allows for accurate amplification of high-frequency signals.

Technology: BIFET

BIFET technology combines the advantages of both bipolar and CMOS technologies, offering high performance and low power consumption.

Technical Specifications

Operational Amplifiers (Op Amps) TLE2062ACDG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIFET

Power Supply:

±3.5/±18/7/36 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.3 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

4900 uV

Minimum Voltage Gain:

10000

Minimum Slew Rate:

2.5 V/us

Nominal Slew Rate:

3.4 V/us

Maximum Input Offset Current (IIO):

800 pA

Peak Bias Current:

2 nA

Maximum Bias Current (IIB) @25 °C:

3 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

19 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-19 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

635 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLE2062ACDG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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