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TLE2061MJGB

Texas Instruments

TLE2061MJGB by Texas Instruments

TLE2061MJGB by Texas Instruments is an Operational Amplifier with 6000uV Max Input Offset Voltage, 90dB Nominal CMRR, and 1.8V/us Min Slew Rate. Ideal for military applications due to its MILITARY temp grade, low-bias design, and BIFET technology for micropower operation.

Median Price

$26.382

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 203 parts In-Stock

1+ parts

-

100+ parts

$23.450

1k+ parts

$20.980

10k+ parts

$19.740

203

-

$23.450

$20.980

$19.740

DigiKey

USA . 203 parts In-Stock

1+ parts

-

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203

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Verical

USA . 132 parts In-Stock

1+ parts

-

100+ parts

$29.313

1k+ parts

$26.225

10k+ parts

$24.675

132

-

$29.313

$26.225

$24.675

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,672 parts In-Stock

1+ parts

$18.715

100+ parts

-

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1,672

$18.715

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Vyrian

USA . 5,999 parts In-Stock

1+ parts

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5,999

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DigiKey Marketplace

USA . 203 parts In-Stock

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203

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Sunrise Surplus Inc.

USA . 50 parts In-Stock

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50

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Elcom Components

USA . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,836 parts In-Stock

1+ parts

$1.020

100+ parts

-

1k+ parts

$1.892

10k+ parts

-

1,836

$1.020

-

$1.892

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DigiPath Technology Company

USA . 2,128 parts In-Stock

1+ parts

$1.123

100+ parts

$1.033

1k+ parts

-

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2,128

$1.123

$1.033

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ChromeModa Solutions

Germany . 3,867 parts In-Stock

1+ parts

$1.146

100+ parts

$0.940

1k+ parts

-

10k+ parts

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3,867

$1.146

$0.940

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IDEA Electronic Components Group

UK . 420 parts In-Stock

1+ parts

$1.146

100+ parts

-

1k+ parts

$1.031

10k+ parts

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420

$1.146

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$1.031

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Corphita

USA . 4,496 parts In-Stock

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$17.730

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4,496

$17.730

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Overview

Experience unparalleled performance and reliability with the TLE2061MJGB operational amplifier by Texas Instruments. This top-of-the-line component boasts exceptional quality and precision engineering, making it ideal for a wide range of applications in industries such as automotive, telecommunications, and industrial automation. With its low bias current, high common-mode rejection ratio, and micropower capabilities, this amplifier delivers unmatched value and benefits to customers looking for a reliable and efficient solution for their electronic projects. Trust Texas Instruments for cutting-edge technology and superior performance.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This durable package body material ensures reliability and longevity of the product in various operating conditions.

Maximum Input Offset Voltage: 6000 uV

The low input offset voltage ensures minimal errors in the output signal, making it suitable for precision applications.

Nominal Common Mode Reject Ratio: 90 dB

High common mode rejection ratio indicates the ability of the op amp to reject common-mode signals, ensuring accurate differential signal amplification.

Nominal Supply Voltage / Vsup (V): 5

Suitable supply voltage for various applications while ensuring low power consumption.

Minimum Slew Rate: 1.8 V/us

The fast slew rate allows the op amp to quickly respond to input voltage changes, making it suitable for applications requiring high-speed signal processing.

Maximum Operating Temperature: 125 °C

Wide operating temperature range makes it suitable for use in harsh environmental conditions.

Micropower: YES

The micropower feature indicates low power consumption, making it ideal for battery-operated devices and applications requiring efficient power usage.

Nominal Unity Gain Bandwidth: 1300 kHz

High unity gain bandwidth ensures stability and high-frequency response of the op amp, making it suitable for high-speed applications.

Low-Bias: YES

Low bias current minimizes input errors and offsets, making the op amp suitable for precision applications.

Temperature Grade: MILITARY

Military-grade temperature rating ensures reliability and performance in extreme temperature conditions, making it suitable for rugged applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLE2061MJGB attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIFET

Power Supply:

±3.5/±18/7/36 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.3 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Minimum Common Mode Rejection Ratio (CMRR ):

72 dB

Input Offset Voltage Limit:

6000 uV

Minimum Voltage Gain:

500

Minimum Slew Rate:

1.8 V/us

Nominal Slew Rate:

3.4 V/us

Maximum Input Offset Current (IIO):

20 nA

Peak Bias Current:

30 nA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

19 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-19 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

350 μA

Physical Characteristics

Length:

0.377 in (9.58 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin/Lead

Package Body Material:

Ceramic, Metal-Sealed Cofired

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

38535Q/M;38534H;883B

Standards

JESD-30 Code:

R-CDIP-T8

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

TLE2061MJGB Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

NSN

5962-01-458-6840, 5962014586840

NIIN

014586840

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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