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TLC27L4AIDG4

Texas Instruments

TLC27L4AIDG4 by Texas Instruments

TLC27L4AIDG4 by Texas Instruments is a CMOS Operational Amplifier with 4 functions, low bias, and micropower features. It has a max input offset voltage of 7000 uV and nominal voltage of 10 V. Ideal for industrial applications requiring high common mode rejection ratio and low slew rate.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,682 parts In-Stock

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8,682

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Digiode

USA . 785 parts In-Stock

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785

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One Stop Electronics

USA . 448 parts In-Stock

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$0.410

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448

$0.410

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Parana Technologies

USA . 358 parts In-Stock

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$6.095

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$6.871

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358

$6.095

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DigiPath Technology Company

USA . 1,693 parts In-Stock

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$6.711

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$6.174

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$6.711

$6.174

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ChromeModa Solutions

Germany . 1,862 parts In-Stock

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$6.848

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$5.615

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1,862

$6.848

$5.615

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IDEA Electronic Components Group

UK . 264 parts In-Stock

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$6.848

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$6.163

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264

$6.848

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$6.163

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AZTECH Wire

Italy . 704 parts In-Stock

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$14.450

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704

$14.450

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Microchip USA

USA . 1,530 parts In-Stock

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Corphita

USA . 1,351 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the TLC27L4AIDG4 by Texas Instruments, a leading manufacturer in the industry. This operational amplifier boasts exceptional quality and precision, making it ideal for a wide range of applications. From industrial automation to consumer electronics, this small outline package offers customers unmatched value, benefits, and advantages. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the operational amplifier, ensuring reliability and longevity.

Maximum Input Offset Voltage: 7000 uV

Low offset voltage ensures accurate output signal representation and minimizes errors in signal processing applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on circuit boards, saving space and reducing overall product size.

Nominal Common Mode Reject Ratio: 97 dB

High common mode rejection ratio helps in filtering out unwanted noise or interference, improving signal quality and accuracy.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, making the operational amplifier suitable for a variety of battery-powered applications.

Nominal Unity Gain Bandwidth: 110 kHz

The high unity gain bandwidth allows for stable amplifier performance across a wide range of frequencies, making it suitable for audio and instrumentation applications.

Architechture: VOLTAGE-FEEDBACK

Voltage-feedback architecture provides excellent linearity and stability, making the operational amplifier ideal for precision voltage amplification tasks.

Technical Specifications

Operational Amplifiers (Op Amps) TLC27L4AIDG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

5/10 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

110 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

97 dB

Minimum Common Mode Rejection Ratio (CMRR ):

65 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

50000

Minimum Slew Rate:

0.02 V/us

Nominal Slew Rate:

0.04 V/us

Peak Bias Current:

2 nA

Operational Characteristics

Nominal Supply Voltage:

10 V

Maximum Supply Voltage:

18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

172 μA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TLC27L4AIDG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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