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TLC27L2AIDRG4

Texas Instruments

TLC27L2AIDRG4 by Texas Instruments

TLC27L2AIDRG4 by Texas Instruments is a CMOS Operational Amplifier with 7000uV Max Input Offset Voltage, 94dB Nominal CMRR, and 130kHz Unity Gain Bandwidth. Ideal for industrial applications requiring low-bias amplification in compact designs due to its micropower technology and small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,062 parts In-Stock

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Digiode

USA . 3,347 parts In-Stock

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ECAB

Sweden . 415 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 1,613 parts In-Stock

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$3.410

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Parana Technologies

USA . 746 parts In-Stock

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$4.101

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$380.851

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$3.691

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746

$4.101

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$3.691

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DigiPath Technology Company

USA . 969 parts In-Stock

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$4.516

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$4.155

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969

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ChromeModa Solutions

Germany . 5,247 parts In-Stock

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$4.608

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$3.779

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IDEA Electronic Components Group

UK . 210 parts In-Stock

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$4.608

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$4.147

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AZTECH Wire

Italy . 890 parts In-Stock

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$10.957

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Microchip USA

USA . 3,795 parts In-Stock

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Corphita

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Perfect Parts

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Overview

Unlock the power of precision with the TLC27L2AIDRG4 by Texas Instruments. As a leader in operational amplifiers, Texas Instruments guarantees top-notch quality and reliability. This versatile component is perfect for a wide range of applications, offering unparalleled performance and efficiency. Whether you're designing circuits for industrial automation or medical devices, this op amp delivers exceptional value, superior functionality, and unmatched benefits to meet your design needs. Trust Texas Instruments for cutting-edge technology that takes your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to heat, making the product suitable for various environments.

Maximum Input Offset Voltage: 7000 uV

Low input offset voltage ensures accurate and precise signal processing.

Surface Mount: YES

Surface mount design allows for easy and efficient PCB assembly.

Nominal Supply Voltage / Vsup (V): 5

Operates at a commonly available voltage, making it versatile and easy to integrate into circuits.

Minimum Slew Rate: 0.02 V/us

Fast slew rate enables quick response time, suitable for applications requiring rapid signal processing.

Maximum Supply Voltage Limit: 18 V

Wide supply voltage range provides flexibility in design and compatibility with various power sources.

Technology: CMOS

Utilizing CMOS technology offers low power consumption and high input impedance, enhancing efficiency and signal integrity.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifiers are versatile and widely used in various applications such as signal conditioning, filtering, and amplification.

Technical Specifications

Operational Amplifiers (Op Amps) TLC27L2AIDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3/16 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

130 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

94 dB

Minimum Common Mode Rejection Ratio (CMRR ):

65 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

50000

Minimum Slew Rate:

0.02 V/us

Nominal Slew Rate:

0.03 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

2 nA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

54 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLC27L2AIDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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