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TLC2652AMJB

Texas Instruments

TLC2652AMJB by Texas Instruments

TLC2652AMJB by Texas Instruments is a CMOS operational amplifier with low-offset and low-bias features. It offers a max input offset voltage of 8uV, ideal for military applications due to MIL-STD-883 screening level. With a nominal unity gain bandwidth of 1900 kHz, it ensures high performance in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,100 parts In-Stock

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8,100

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Digiode

USA . 702 parts In-Stock

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702

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Resion

USA . 3 parts In-Stock

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One Stop Electronics

USA . 702 parts In-Stock

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$2.410

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702

$2.410

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Parana Technologies

USA . 1,219 parts In-Stock

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$3.455

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$3.979

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$3.455

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DigiPath Technology Company

USA . 308 parts In-Stock

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$3.804

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$3.804

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IDEA Electronic Components Group

UK . 1,228 parts In-Stock

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$3.882

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$3.494

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$3.882

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$3.494

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ChromeModa Solutions

Germany . 343 parts In-Stock

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$3.882

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$3.183

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343

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AZTECH Wire

Italy . 796 parts In-Stock

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$12.065

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Component Stockers USA

USA . 724 parts In-Stock

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$99.990

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Corphita

USA . 3,928 parts In-Stock

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Microchip USA

USA . 2,152 parts In-Stock

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Overview

Enhance your electronic designs with the high-quality TLC2652AMJB operational amplifier by Texas Instruments. Known for its reliability and precision, Texas Instruments delivers top-notch performance in the field of operational amplifiers. This versatile component is ideal for a wide range of applications, offering customers unparalleled value and benefits. Trust in Texas Instruments to provide you with the cutting-edge technology you need for your next project.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides excellent protection and durability for the operational amplifier, ensuring long-term reliability in various environments.

Maximum Input Offset Voltage: 8 uV

Low input offset voltage ensures high precision and accuracy in amplification applications.

Nominal Common Mode Reject Ratio: 140 dB

High common mode rejection ratio helps in eliminating interference and noise from the input signal, leading to cleaner output.

Nominal Unity Gain Bandwidth: 1900 kHz

Higher unity gain bandwidth allows for faster signal processing and higher frequency response, making it suitable for audio and signal conditioning applications.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, making this operational amplifier energy-efficient and suitable for battery-powered applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLC2652AMJB attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Chooper Stab

Technology:

CMOS

Power Supply:

±5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

Yes

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.9 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

140 dB

Minimum Common Mode Rejection Ratio (CMRR ):

120 dB

Input Offset Voltage Limit:

8 uV

Minimum Voltage Gain:

1000000

Minimum Slew Rate:

1.3 V/us

Nominal Slew Rate:

2.8 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

500 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

8 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-8 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

2.5 mA

Physical Characteristics

Length:

0.77 in (19.56 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

14

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Ceramic, Glass-Sealed

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

MIL-STD-883

Standards

JESD-30 Code:

R-GDIP-T14

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP14,.3

Trade Compliance

TLC2652AMJB Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

NSN

5962-01-461-6007, 5962014616007

NIIN

014616007

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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