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TLC2274IPWRG4

Texas Instruments

TLC2274IPWRG4 by Texas Instruments

TLC2274IPWRG4 by Texas Instruments is a CMOS Operational Amplifier with 3000uV Max Input Offset Voltage, 1.7V/us Min Slew Rate, and 75dB Nominal CMRR. Ideal for automotive applications due to its low-bias design, it operates in a wide temperature range (-40 to 125 °C) and offers high voltage supply limits (+-8V).

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

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One Stop Electronics

USA . 1,429 parts In-Stock

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Parana Technologies

USA . 1,414 parts In-Stock

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DigiPath Technology Company

USA . 2,203 parts In-Stock

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ChromeModa Solutions

Germany . 1,788 parts In-Stock

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IDEA Electronic Components Group

UK . 864 parts In-Stock

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AZTECH Wire

Italy . 694 parts In-Stock

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Overview

Discover the TLC2274IPWRG4 by Texas Instruments, a high-quality operational amplifier designed to deliver superior performance in various applications. With Texas Instruments' reputation for excellence in semiconductor manufacturing, this op amp offers unmatched reliability and precision. Ideal for automotive and industrial applications, this compact yet powerful component provides customers with exceptional value, reliability, and efficiency. Upgrade your designs with the TLC2274IPWRG4 and experience top-tier performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the internal components of the operational amplifier.

Maximum Input Offset Voltage: 3000 uV

Low input offset voltage ensures accurate and stable performance of the amplifier.

Maximum Average Bias Current (IIB): 0.0008 uA

Low bias current helps in maintaining efficiency and reducing power consumption.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and simplifying production process.

Nominal Common Mode Reject Ratio: 75 dB

High common mode rejection ratio ensures minimal interference from external signals.

Nominal Supply Voltage / Vsup (V): 5

Suitable supply voltage for various applications while maintaining stable operation.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the amplifier reliable in different environments.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for amplifying signals accurately and efficiently in various electronic circuits.

Technical Specifications

Operational Amplifiers (Op Amps) TLC2274IPWRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±2.2/±8/4.4/16 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.25 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

75 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

15000

Minimum Slew Rate:

1.7 V/us

Nominal Slew Rate:

3.6 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

800 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

8 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-8 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

6 mA

Physical Characteristics

Length:

0.197 in (5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

14

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP14,.25

Trade Compliance

TLC2274IPWRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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