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TLC2274IDRG4

Texas Instruments

TLC2274IDRG4 by Texas Instruments

TLC2274IDRG4 by Texas Instruments is a CMOS Operational Amplifier with 4 functions, 3000uV max input offset voltage, and 1.7V/us min slew rate. Ideal for automotive applications due to its low-bias design, it operates at -40 to 125 °C with a supply voltage of +-2.2/+-8/4.4/16 V.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 105,730 parts In-Stock

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Digiode

USA . 3,016 parts In-Stock

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Vyrian

USA . 2,688 parts In-Stock

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Nova Conductors

Japan . 30 parts In-Stock

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Parana Technologies

USA . 59 parts In-Stock

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$1.153

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$1.966

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59

$1.153

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$1.966

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DigiPath Technology Company

USA . 1,215 parts In-Stock

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$1.269

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$1.168

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$1.269

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IDEA Electronic Components Group

UK . 1,083 parts In-Stock

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$1.295

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$1.166

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ChromeModa Solutions

Germany . 43 parts In-Stock

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$1.295

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$1.062

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Ampacity Inc.

Singapore . 976 parts In-Stock

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$3.410

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One Stop Electronics

USA . 1,418 parts In-Stock

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$4.410

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AZTECH Wire

Italy . 424 parts In-Stock

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Component Stockers USA

USA . 530 parts In-Stock

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$99.990

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Authorized Procurement Solutions

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A-Z Elektronik GmbH

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Continental Prestige Electronics

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Microchip USA

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Argo Parts USA

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Aranea Global

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Corphita

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Overview

Discover the unparalleled quality and performance of the TLC2274IDRG4 operational amplifier by Texas Instruments. Designed with precision and reliability in mind, this product is perfect for a wide range of applications. Whether you're working on automotive projects or industrial automation, the TLC2274IDRG4 offers low bias, high voltage gain, and temperature grade technology that ensures optimal functionality. Trust Texas Instruments to deliver excellence, value, and innovation with every product they create. Elevate your projects with the TLC2274IDRG4 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for long-term usage.

Maximum Input Offset Voltage: 3000 uV

Ensures minimal error in the output signal, leading to accurate measurements.

No. of Functions: 4

Offers versatility and flexibility in different circuit applications.

Nominal Common Mode Reject Ratio: 80 dB

Allows for effective rejection of common mode noise, ensuring signal integrity.

Surface Mount: YES

Enables easy and efficient installation on circuit boards.

Technology: CMOS

Utilizes low power consumption and provides high input impedance.

Nominal Unity Gain Bandwidth: 2250 kHz

Supports high-frequency applications with stable unity gain bandwidth.

Maximum Operating Temperature: 125 °C

Allows for reliable performance even in harsh operating conditions.

Technical Specifications

Operational Amplifiers (Op Amps) TLC2274IDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±2.2/±8/4.4/16 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.25 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Minimum Common Mode Rejection Ratio (CMRR ):

75 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

1.7 V/us

Nominal Slew Rate:

3.6 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

800 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

8 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-8 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

6 mA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TLC2274IDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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