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TLC2272IPWRG4

Texas Instruments

TLC2272IPWRG4 by Texas Instruments

TLC2272IPWRG4 by Texas Instruments is a CMOS Operational Amplifier with 2 functions, featuring low-bias and frequency compensation. It has a max input offset voltage of 3000 uV and operates at temperatures ranging from -40 to 125 °C. Ideal for automotive applications due to its compact size and low power consumption.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 13,600 parts In-Stock

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Vyrian

USA . 5,332 parts In-Stock

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Digiode

USA . 638 parts In-Stock

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Parana Technologies

USA . 489 parts In-Stock

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$2.739

100+ parts

$254.314

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$2.465

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489

$2.739

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$2.465

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DigiPath Technology Company

USA . 717 parts In-Stock

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$3.015

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$2.774

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717

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ChromeModa Solutions

Germany . 2,604 parts In-Stock

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$3.077

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$2.523

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IDEA Electronic Components Group

UK . 836 parts In-Stock

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$3.077

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$2.769

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836

$3.077

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One Stop Electronics

USA . 568 parts In-Stock

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$5.410

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AZTECH Wire

Italy . 751 parts In-Stock

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$5.699

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Component Stockers USA

USA . 207 parts In-Stock

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$99.990

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A-Z Elektronik GmbH

Germany . 5,087 parts In-Stock

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Microchip USA

USA . 2,984 parts In-Stock

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Corphita

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Overview

Elevate your projects with the TLC2272IPWRG4 by Texas Instruments, a top-tier manufacturer known for delivering high-quality operational amplifiers. Perfect for a wide range of applications, this amplifier offers exceptional value by providing superior performance, reliability, and precision. With its compact size and versatile features, the TLC2272IPWRG4 is a game-changer for any project that requires a powerful and efficient operational amplifier. Experience the difference that Texas Instruments brings to the table and take your projects to the next level with the TLC2272IPWRG4.

Feature Benefit Bullets

Maximum Input Offset Voltage: 3000 uV

Having a low maximum input offset voltage ensures minimal errors in the output signal, making this product suitable for precision applications.

Maximum Average Bias Current (IIB): 0.0008 uA

The low bias current helps in maintaining stable operation and reducing power consumption, making it a reliable choice for various circuits.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V provides a standard operating level that is commonly used in many electronic circuits, ensuring compatibility and ease of integration.

Minimum Slew Rate: 1.7 V/us

With a fast slew rate, this product can quickly respond to changes in input signals, making it ideal for applications requiring rapid signal processing.

Technology: CMOS

Utilizing CMOS technology allows for low power consumption and high levels of integration, making this product efficient and compact for various electronic designs.

Technical Specifications

Operational Amplifiers (Op Amps) TLC2272IPWRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±2.2/±8/4.4/16 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.25 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

75 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

15000

Minimum Slew Rate:

1.7 V/us

Nominal Slew Rate:

3.6 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

800 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

8 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-8 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

3 mA

Physical Characteristics

Length:

0.173 in (4.4 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.25

Trade Compliance

TLC2272IPWRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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