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TLC2254AIPW

Texas Instruments

TLC2254AIPW by Texas Instruments

TLC2254AIPW by Texas Instruments is a CMOS Operational Amplifier with 4 functions, featuring low bias current (0.00006 uA) and micropower design. Ideal for automotive applications, it operates at temperatures ranging from -40 to 125 °C and offers a unity gain bandwidth of 210 kHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 39,500 parts In-Stock

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Vyrian

USA . 4,704 parts In-Stock

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Digiode

USA . 3,714 parts In-Stock

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3,714

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LIBRA Elektronik GmbH

Germany . 376 parts In-Stock

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376

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One Stop Electronics

USA . 309 parts In-Stock

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$5.410

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309

$5.410

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Parana Technologies

USA . 1,100 parts In-Stock

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$5.864

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$6.647

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DigiPath Technology Company

USA . 984 parts In-Stock

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$6.457

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984

$6.457

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ChromeModa Solutions

Germany . 6,073 parts In-Stock

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$6.589

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$5.403

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$6.589

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IDEA Electronic Components Group

UK . 1,564 parts In-Stock

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$6.589

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$5.930

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AZTECH Wire

Italy . 298 parts In-Stock

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$19.133

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Kepictronics

USA . 622 parts In-Stock

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Corphita

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Microchip USA

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Overview

Unlock unparalleled performance and reliability with the TLC2254AIPW operational amplifier by Texas Instruments. Boasting exceptional quality and precision engineering, this op amp is perfect for a wide range of applications in automotive and industrial settings. Experience the value of micropower operation, low-bias currents, and high voltage gains, all packaged in a compact and durable design. Trust Texas Instruments to deliver cutting-edge technology that exceeds your expectations. Elevate your projects with the TLC2254AIPW today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable or rugged applications.

Maximum Input Offset Voltage: 1000 uV

This low input offset voltage ensures accurate and precise signal processing in the amplifier.

Maximum Average Bias Current (IIB): 0.001 uA

The low bias current results in minimal power consumption and reduced signal distortion in the amplifier.

Surface Mount: YES

The surface mount capability allows for easy and efficient integration into PCB designs.

No. of Functions: 4

With multiple functions, this operational amplifier offers versatility and flexibility in various circuit applications.

Nominal Common Mode Reject Ratio: 83 dB

The high common mode rejection ratio helps in minimizing unwanted noise and interference from the input signal.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures compatibility with standard power sources.

Maximum Input Offset Current (IIO): 0.00006 uA

The low input offset current contributes to accurate signal processing and minimal errors in the amplifier.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The compact and thin profile package design saves space and allows for dense PCB layouts.

Minimum Slew Rate: 0.05 V/us

The fast slew rate ensures rapid response to input signals, making it suitable for high-speed applications.

Maximum Supply Voltage Limit: 8 V

The maximum supply voltage limit of 8V provides protection against voltage spikes and overvoltage conditions.

Maximum Operating Temperature: 125 °C

The wide operating temperature range allows for reliable performance in harsh environmental conditions.

Frequency Compensation: YES

The frequency compensation feature ensures stability and prevents oscillations in the amplifier circuit.

Minimum Voltage Gain: 10000

The high minimum voltage gain allows for amplification of weak signals with high precision and accuracy.

Technology: CMOS

The CMOS technology offers low power consumption, high input impedance, and high speed performance in the amplifier.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, this product is designed for a wide range of signal processing and amplification applications.

Temperature Grade: AUTOMOTIVE

The automotive-grade temperature rating ensures reliable operation in automotive electronics and other high-temperature environments.

Low-Bias: YES

The low-bias design minimizes power consumption and signal distortion, making it suitable for low-power applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLC2254AIPW attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±2.2/±8/4.4/16 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

210 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

83 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

1000 uV

Minimum Voltage Gain:

10000

Minimum Slew Rate:

0.05 V/us

Nominal Slew Rate:

0.12 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

1 nA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

8 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-8 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

250 μA

Physical Characteristics

Length:

0.197 in (5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

14

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP14,.25

Trade Compliance

TLC2254AIPW Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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