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TLC082CDGNG4

Texas Instruments

TLC082CDGNG4 by Texas Instruments

TLC082CDGNG4 by Texas Instruments is an Operational Amplifier with 2 functions, offering a Max Input Offset Voltage of 3000uV and Nominal Voltage of 5V. Ideal for applications requiring low bias current like sensor interfaces or precision instrumentation due to its Low-Bias feature and high Common Mode Reject Ratio of 110dB.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,306 parts In-Stock

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4,306

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Vyrian

USA . 3,605 parts In-Stock

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3,605

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,972 parts In-Stock

1+ parts

$6.088

100+ parts

-

1k+ parts

$6.865

10k+ parts

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1,972

$6.088

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$6.865

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DigiPath Technology Company

USA . 583 parts In-Stock

1+ parts

$6.704

100+ parts

$6.168

1k+ parts

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583

$6.704

$6.168

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ChromeModa Solutions

Germany . 1,179 parts In-Stock

1+ parts

$6.841

100+ parts

$5.610

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1,179

$6.841

$5.610

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IDEA Electronic Components Group

UK . 354 parts In-Stock

1+ parts

$6.841

100+ parts

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$6.157

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354

$6.841

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$6.157

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One Stop Electronics

USA . 517 parts In-Stock

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$8.410

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517

$8.410

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AZTECH Wire

Italy . 272 parts In-Stock

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$11.157

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272

$11.157

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Corphita

USA . 3,239 parts In-Stock

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3,239

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Microchip USA

USA . 991 parts In-Stock

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991

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Overview

Enhance your electronic designs with the TLC082CDGNG4 by Texas Instruments, a high-quality operational amplifier that offers exceptional performance and reliability. Manufactured by a trusted industry leader, this product is perfect for a wide range of applications in various industries. With its compact design and advanced features, this op amp provides customers with unparalleled value and benefits, allowing for precision and efficiency in their projects. Upgrade your circuits today with the TLC082CDGNG4 and experience the difference in performance and quality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product suitable for a variety of environments.

Maximum Input Offset Voltage: 3000 uV

Low input offset voltage ensures accurate and precise signal processing, making the product ideal for high-precision applications.

Maximum Average Bias Current (IIB): 0.0001 uA

Low bias current results in minimal power consumption and helps maintain signal integrity in low-power applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and costs in production.

Nominal Common Mode Reject Ratio: 110 dB

High common mode rejection ratio ensures effective suppression of noise and interference, leading to reliable performance in noisy environments.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage simplifies power requirements and compatibility with other components in the circuit.

Minimum Slew Rate: 9.5 V/us

Fast slew rate enables quick response to input signal changes, making the product suitable for high-speed applications.

Maximum Supply Voltage Limit: 17 V

Wide supply voltage range allows for flexibility in power supply options and extends the product's compatibility with different systems.

Frequency Compensation: YES

Frequency compensation ensures stability and optimized performance over a range of frequencies, enhancing the product's versatility in various applications.

Nominal Unity Gain Bandwidth: 10000 kHz

High unity gain bandwidth indicates fast signal processing capabilities, making the product suitable for high-frequency applications.

Technology: BIMOS

Utilizes a combination of bipolar and MOSFET technologies to achieve high performance and efficiency, offering a balance of speed and power consumption.

Technical Specifications

Operational Amplifiers (Op Amps) TLC082CDGNG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIMOS

Power Supply:

±2.25/±8/4.5/16 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

10 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

110 dB

Minimum Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

100000

Minimum Slew Rate:

9.5 V/us

Nominal Slew Rate:

16 V/us

Maximum Input Offset Current (IIO):

50 pA

Peak Bias Current:

100 pA

Maximum Bias Current (IIB) @25 °C:

50 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

17 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

5 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.042 in (1.07 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

TLC082CDGNG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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