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THS4511RGTRG4

Texas Instruments

THS4511RGTRG4 by Texas Instruments

THS4511RGTRG4 by Texas Instruments is an Operational Amplifier with 5000uV Max Input Offset Voltage, 18.5uA Max Average Bias Current, and 90dB Nominal CMRR. Ideal for industrial applications requiring a high-speed amplifier in a compact chip carrier package with a supply voltage of 5V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,314 parts In-Stock

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6,314

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Digiode

USA . 2,490 parts In-Stock

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2,490

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Distributors (Availability)

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Parana Technologies

USA . 1,318 parts In-Stock

1+ parts

$6.347

100+ parts

-

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$7.100

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1,318

$6.347

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$7.100

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One Stop Electronics

USA . 232 parts In-Stock

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$6.410

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232

$6.410

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DigiPath Technology Company

USA . 516 parts In-Stock

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$6.989

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516

$6.989

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IDEA Electronic Components Group

UK . 1,500 parts In-Stock

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$7.132

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$6.419

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1,500

$7.132

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$6.419

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ChromeModa Solutions

Germany . 461 parts In-Stock

1+ parts

$7.132

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$5.848

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461

$7.132

$5.848

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AZTECH Wire

Italy . 257 parts In-Stock

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$12.197

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257

$12.197

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Microchip USA

USA . 4,241 parts In-Stock

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Corphita

USA . 3,368 parts In-Stock

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Overview

Experience top-notch performance with the THS4511RGTRG4 by Texas Instruments, a leading manufacturer of high-quality operational amplifiers. This versatile chip carrier, with a very thin profile, offers exceptional common mode rejection ratio and unity gain bandwidth, making it ideal for a wide range of industrial applications. With a maximum supply voltage of 5.5V and low power consumption, this operational amplifier provides customers with reliable and efficient operation. Upgrade your systems today with the THS4511RGTRG4 for superior performance and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 5000 uV

Low input offset voltage ensures minimal error in the amplifier's output signal, making it suitable for precision applications.

Maximum Average Bias Current (IIB): 18.5 uA

Low bias current helps in reducing power consumption and improving the stability of the amplifier.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and simplifying the manufacturing process.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage of 5V, making it compatible with a wide range of electronic systems.

Nominal Common Mode Reject Ratio: 90 dB

High common mode rejection ratio helps in eliminating noise and interference from the input signal, resulting in a cleaner output.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows the amplifier to perform reliably in various environmental conditions.

Nominal Unity Gain Bandwidth: 2000000 kHz

High unity gain bandwidth indicates superior frequency response and fast signal processing capabilities of the amplifier.

Maximum Supply Current: 43.5 mA

Capable of delivering sufficient current to drive loads, making it suitable for a variety of applications.

Technical Specifications

Operational Amplifiers (Op Amps) THS4511RGTRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Power Supply:

5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

2000 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

5000 uV

Nominal Slew Rate:

110 V/us

Peak Bias Current:

18.5 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

5.5 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

43.5 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.039 in (1 mm)

Total Terminals:

16

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Quad

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PQCC-N16

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Chip Carrier, Very Thin Profile

Package Equivalence Code:

LCC16,.12SQ,20

Trade Compliance

THS4511RGTRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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