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THS4505DRG4

Texas Instruments

THS4505DRG4 by Texas Instruments

THS4505DRG4 by Texas Instruments is an Operational Amplifier with 1000uV Max Input Offset Voltage, 80dB Nominal CMRR, and 20MHz Bandwidth. Widely used in industrial applications for voltage-feedback amplification due to its compact size and low bias current of 5.2uA.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,312 parts In-Stock

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4,312

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Digiode

USA . 2,749 parts In-Stock

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2,749

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 395 parts In-Stock

1+ parts

$6.096

100+ parts

-

1k+ parts

$6.873

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395

$6.096

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$6.873

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ChromeModa Solutions

Germany . 4,647 parts In-Stock

1+ parts

$6.849

100+ parts

$5.616

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4,647

$6.849

$5.616

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IDEA Electronic Components Group

UK . 1,152 parts In-Stock

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$6.849

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$6.164

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1,152

$6.849

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$6.164

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One Stop Electronics

USA . 1,409 parts In-Stock

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$8.410

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1,409

$8.410

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AZTECH Wire

Italy . 268 parts In-Stock

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$17.845

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268

$17.845

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Microchip USA

USA . 3,906 parts In-Stock

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3,906

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DigiPath Technology Company

USA . 1,618 parts In-Stock

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$6.175

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1,618

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$6.175

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Corphita

USA . 520 parts In-Stock

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Overview

Discover the superior performance and reliability of the Texas Instruments THS4505DRG4 Operational Amplifier. With a reputation for excellence in manufacturing, Texas Instruments ensures that this op amp delivers precise amplification for a wide range of applications. From industrial to consumer electronics, this high-quality component offers customers exceptional value, efficiency, and versatility. Experience the difference with Texas Instruments and take your projects to the next level with the THS4505DRG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 1000 uV

Ensures minimal errors in the output signal due to input voltage differentials.

Maximum Average Bias Current (IIB): 5.2 uA

Maintains stable and consistent operation of the operational amplifier.

Nominal Supply Voltage / Vsup (V): 5

Suitable for applications that require a 5V power supply.

Nominal Unity Gain Bandwidth: 210000 kHz

Offers high bandwidth for accurate signal amplification.

Nominal Bandwidth (3dB): 20 MHz

Provides sufficient frequency response for a wide range of applications.

Architecture: VOLTAGE-FEEDBACK

Ensures stable and reliable performance in voltage amplification tasks.

Technical Specifications

Operational Amplifiers (Op Amps) THS4505DRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Power Supply:

5/±5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Bandwidth (3dB):

20 MHz

Nominal Unity Gain Bandwidth:

210 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Minimum Common Mode Rejection Ratio (CMRR ):

74 dB

Input Offset Voltage Limit:

1000 uV

Minimum Voltage Gain:

398

Nominal Slew Rate:

1800 V/us

Maximum Input Offset Current (IIO):

1 uA

Peak Bias Current:

5.2 uA

Maximum Bias Current (IIB) @25 °C:

4.6 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

8.25 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-8.25 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

20 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

THS4505DRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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