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THS4505DGKR

Texas Instruments

THS4505DGKR by Texas Instruments

THS4505DGKR by Texas Instruments is an Operational Amplifier with 1000uV Max Input Offset Voltage, 80dB Nominal CMRR, and 210000 kHz Unity Gain Bandwidth. Ideal for industrial applications requiring precise signal amplification in a compact form factor.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,305 parts In-Stock

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7,305

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Digiode

USA . 4,105 parts In-Stock

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4,105

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Nova Conductors

Japan . 700 parts In-Stock

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700

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Distributors (Availability)

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Parana Technologies

USA . 8 parts In-Stock

1+ parts

$4.774

100+ parts

-

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$5.278

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8

$4.774

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$5.278

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DigiPath Technology Company

USA . 679 parts In-Stock

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$5.257

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679

$5.257

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ChromeModa Solutions

Germany . 4,718 parts In-Stock

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$5.364

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$4.398

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4,718

$5.364

$4.398

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IDEA Electronic Components Group

UK . 74 parts In-Stock

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$5.364

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$4.828

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74

$5.364

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$4.828

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One Stop Electronics

USA . 758 parts In-Stock

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$5.410

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758

$5.410

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Ampacity Inc.

Singapore . 200 parts In-Stock

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$7.410

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200

$7.410

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AZTECH Wire

Italy . 197 parts In-Stock

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$17.666

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$17.666

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Corphita

USA . 2,833 parts In-Stock

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Microchip USA

USA . 390 parts In-Stock

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390

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Elevate your projects with the THS4505DGKR operational amplifier from Texas Instruments. Crafted with precision and quality in mind, this small outline, thin profile amplifier offers a nominal common mode reject ratio of 80 dB and a maximum input offset voltage of 1000 uV, ensuring reliable performance in industrial-grade applications. With a nominal unity gain bandwidth of 210000 kHz and a maximum supply current of 25 mA, this amplifier delivers exceptional value and versatility to customers seeking high-performance solutions. Trust in Texas Instruments for top-notch products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is cost-effective, lightweight, and provides good insulation for the components inside the package.

Maximum Input Offset Voltage: 1000 uV

Low input offset voltage ensures accurate signal processing and minimizes errors in the output.

Nominal Common Mode Reject Ratio: 80 dB

High common mode reject ratio helps in rejecting unwanted noise and interference from the input signals.

Nominal Supply Voltage / Vsup (V): 5

This supply voltage is commonly available and convenient for various applications.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows the op amp to be used in various environments without performance degradation.

Technical Specifications

Operational Amplifiers (Op Amps) THS4505DGKR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Power Supply:

5/±5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

210 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

1000 uV

Nominal Slew Rate:

1800 V/us

Peak Bias Current:

5.2 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

8.25 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-8.25 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

25 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

THS4505DGKR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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