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THS4504DR

Texas Instruments

THS4504DR by Texas Instruments

THS4504DR by Texas Instruments is an Operational Amplifier with 7000uV Max Input Offset Voltage, 5.2uA Max Average Bias Current, and 80dB Nominal CMRR. Ideal for industrial applications requiring a wideband amplifier with VFB architecture in a small outline package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,583 parts In-Stock

1+ parts

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8,583

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Digiode

USA . 3,938 parts In-Stock

1+ parts

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-

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3,938

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,302 parts In-Stock

1+ parts

$3.579

100+ parts

-

1k+ parts

$4.099

10k+ parts

-

2,302

$3.579

-

$4.099

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ChromeModa Solutions

Germany . 2,671 parts In-Stock

1+ parts

$4.021

100+ parts

$3.297

1k+ parts

-

10k+ parts

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2,671

$4.021

$3.297

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IDEA Electronic Components Group

UK . 349 parts In-Stock

1+ parts

$4.021

100+ parts

-

1k+ parts

$3.619

10k+ parts

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349

$4.021

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$3.619

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One Stop Electronics

USA . 419 parts In-Stock

1+ parts

$8.410

100+ parts

-

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419

$8.410

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AZTECH Wire

Italy . 359 parts In-Stock

1+ parts

$14.849

100+ parts

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359

$14.849

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Microchip USA

USA . 1,781 parts In-Stock

1+ parts

$22.380

100+ parts

$22.240

1k+ parts

$22.170

10k+ parts

$22.100

1,781

$22.380

$22.240

$22.170

$22.100

Corphita

USA . 2,909 parts In-Stock

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2,909

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DigiPath Technology Company

USA . 1,084 parts In-Stock

1+ parts

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100+ parts

$3.625

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1,084

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$3.625

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Overview

Discover the powerful THS4504DR operational amplifier by Texas Instruments, a top-tier manufacturer known for high-quality components. This versatile op amp offers precision and reliability, making it perfect for a wide range of applications. With a nominal bandwidth of 20 MHz and a unity gain bandwidth of 260000 kHz, this amplifier delivers exceptional performance. Trust Texas Instruments to provide cutting-edge solutions for your electronic needs. Elevate your projects with the THS4504DR and experience superior results like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the product suitable for a wide range of applications.

Maximum Input Offset Voltage: 7000 uV

Low input offset voltage ensures high accuracy in signal processing.

Nominal Common Mode Reject Ratio: 80 dB

High common mode reject ratio helps in eliminating noise and interference from the input signal.

Nominal Unity Gain Bandwidth: 260000 kHz

High unity gain bandwidth allows for high-frequency signal processing.

Wideband: YES

Wideband design enables the product to handle a wide range of frequencies effectively.

Technical Specifications

Operational Amplifiers (Op Amps) THS4504DR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Power Supply:

5/±5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Bandwidth (3dB):

20 MHz

Nominal Unity Gain Bandwidth:

260 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Minimum Common Mode Rejection Ratio (CMRR ):

74 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

398

Nominal Slew Rate:

1800 V/us

Maximum Input Offset Current (IIO):

1 uA

Peak Bias Current:

5.2 uA

Maximum Bias Current (IIB) @25 °C:

4.6 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

8.25 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-8.25 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

20 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

THS4504DR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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