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THS4501IDGNR

Texas Instruments

THS4501IDGNR by Texas Instruments

THS4501IDGNR by Texas Instruments is an Operational Amplifier with 1000uV Max Input Offset Voltage, 5.2uA Max Average Bias Current, and 80dB Nominal CMRR. Ideal for industrial applications requiring a compact design and high performance in a wide temperature range from -40 to 85°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,869 parts In-Stock

1+ parts

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5,869

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Digiode

USA . 106 parts In-Stock

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106

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Distributors (Availability)

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One Stop Electronics

USA . 1,087 parts In-Stock

1+ parts

$1.410

100+ parts

-

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1,087

$1.410

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Parana Technologies

USA . 1,161 parts In-Stock

1+ parts

$2.187

100+ parts

-

1k+ parts

$2.698

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1,161

$2.187

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$2.698

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ChromeModa Solutions

Germany . 5,022 parts In-Stock

1+ parts

$2.457

100+ parts

$2.015

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5,022

$2.457

$2.015

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IDEA Electronic Components Group

UK . 784 parts In-Stock

1+ parts

$2.457

100+ parts

-

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$2.211

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784

$2.457

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$2.211

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AZTECH Wire

Italy . 444 parts In-Stock

1+ parts

$15.493

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444

$15.493

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Component Stockers USA

USA . 228 parts In-Stock

1+ parts

$99.990

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228

$99.990

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DigiPath Technology Company

USA . 1,575 parts In-Stock

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$2.215

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1,575

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$2.215

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Microchip USA

USA . 353 parts In-Stock

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353

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Corphita

USA . 223 parts In-Stock

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Overview

Elevate your electronic designs with the Texas Instruments THS4501IDGNR Operational Amplifier. Crafted with precision by a trusted manufacturer, this amplifier offers unparalleled quality and reliability. Ideal for a variety of applications in industries such as automotive, industrial, and telecommunications, this high-performance Op Amp provides exceptional value and performance. Trust in Texas Instruments to deliver cutting-edge technology that meets your needs and exceeds your expectations. Unlock the potential of your projects with the THS4501IDGNR today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the operational amplifier, making it a reliable choice for various applications.

Maximum Input Offset Voltage: 1000 uV

Low offset voltage ensures accurate and precise signal processing, making this operational amplifier suitable for high-precision applications.

Nominal Common Mode Reject Ratio: 80 dB

High common mode rejection ratio helps in reducing noise and interference from the input signal, resulting in a cleaner output signal.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage allows for easy integration into existing circuit designs and ensures compatibility with various power sources.

Maximum Operating Temperature: 85 °C

Wide operating temperature range enables the operational amplifier to function effectively in various environmental conditions, making it versatile for different applications.

Technical Specifications

Operational Amplifiers (Op Amps) THS4501IDGNR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Power Supply:

5/±5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

300 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

1000 uV

Nominal Slew Rate:

92 V/us

Peak Bias Current:

5.2 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

8.25 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-8.25 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

34 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.042 in (1.07 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

THS4501IDGNR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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