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THS4501CDGKR

Texas Instruments

THS4501CDGKR by Texas Instruments

THS4501CDGKR by Texas Instruments is an operational amplifier with 0 uV max input offset voltage, 5 uA max average bias current, and 80 dB nominal CMRR. Ideal for applications requiring precise signal amplification in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,015 parts In-Stock

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6,015

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Digiode

USA . 4,485 parts In-Stock

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4,485

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Distributors (Availability)

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Parana Technologies

USA . 1,586 parts In-Stock

1+ parts

$3.786

100+ parts

-

1k+ parts

$4.276

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1,586

$3.786

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$4.276

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DigiPath Technology Company

USA . 960 parts In-Stock

1+ parts

$4.169

100+ parts

$3.835

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960

$4.169

$3.835

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ChromeModa Solutions

Germany . 412 parts In-Stock

1+ parts

$4.254

100+ parts

$3.488

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412

$4.254

$3.488

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IDEA Electronic Components Group

UK . 51 parts In-Stock

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$4.254

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$3.829

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51

$4.254

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$3.829

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One Stop Electronics

USA . 1,572 parts In-Stock

1+ parts

$6.410

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1,572

$6.410

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AZTECH Wire

Italy . 666 parts In-Stock

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$8.504

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666

$8.504

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Corphita

USA . 4,244 parts In-Stock

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Microchip USA

USA . 325 parts In-Stock

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325

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Overview

Experience unparalleled performance and reliability with the THS4501CDGKR by Texas Instruments. Known for their exceptional quality and innovation, Texas Instruments delivers top-of-the-line operational amplifiers designed for a wide range of applications. From audio equipment to industrial machinery, this amplifier offers customers unmatched value, benefits, and advantages. Trust in Texas Instruments to provide you with the cutting-edge technology you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 0 uV

The extremely low input offset voltage ensures high precision and accuracy in signal processing applications.

Maximum Average Bias Current (IIB): 5 uA

The low bias current ensures minimal distortion and high linearity in the amplifier's output.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Nominal Common Mode Reject Ratio: 80 dB

The high common mode rejection ratio ensures effective rejection of unwanted noise and interference, resulting in a clean output signal.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage provides compatibility with a wide range of electronic systems and power sources.

Maximum Supply Voltage Limit: 8.25 V

The high supply voltage limit allows for flexibility in voltage range and tolerance, making the amplifier suitable for various applications.

Nominal Unity Gain Bandwidth: 300000 kHz

The high unity gain bandwidth indicates the amplifier's ability to maintain high signal bandwidth and fidelity, making it suitable for high-frequency applications.

Nominal Slow Rate: 92 V/us

The high slew rate enables the amplifier to quickly respond to changes in input signals, ensuring fast and accurate signal processing.

Technical Specifications

Operational Amplifiers (Op Amps) THS4501CDGKR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Power Supply:

5/±5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

300 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

0 uV

Nominal Slew Rate:

92 V/us

Peak Bias Current:

5 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

8.25 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-8.25 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Maximum Supply Current:

32 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

THS4501CDGKR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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