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THS4271DGNR

Texas Instruments

THS4271DGNR by Texas Instruments

THS4271DGNR by Texas Instruments is an Operational Amplifier with 40 MHz bandwidth, 72 dB CMRR, and 1400000 kHz unity gain bandwidth. Ideal for industrial applications requiring a voltage-feedback architecture, it operates b/w -40 to 85 °C with a supply voltage of +/-5V and consumes up to 24 mA.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,159 parts In-Stock

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Chip Stock

USA . 4,000 parts In-Stock

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4,000

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Digiode

USA . 1,035 parts In-Stock

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1,035

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Distributors (Availability)

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One Stop Electronics

USA . 1,342 parts In-Stock

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$0.410

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$0.410

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Parana Technologies

USA . 1,207 parts In-Stock

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$6.064

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$6.842

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DigiPath Technology Company

USA . 964 parts In-Stock

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$6.678

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$6.144

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964

$6.678

$6.144

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ChromeModa Solutions

Germany . 6,132 parts In-Stock

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$6.814

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$5.587

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$6.814

$5.587

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IDEA Electronic Components Group

UK . 501 parts In-Stock

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$6.814

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$6.133

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501

$6.814

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AZTECH Wire

Italy . 633 parts In-Stock

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$13.954

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633

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Microchip USA

USA . 3,660 parts In-Stock

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$23.874

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Kepictronics

USA . 5,000 parts In-Stock

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Perfect Parts

USA . 1,868 parts In-Stock

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Corphita

USA . 1,547 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of the THS4271DGNR operational amplifier by Texas Instruments. With a sleek square package design and advanced voltage-feedback architecture, this amplifier offers exceptional performance in a wide range of applications. From precision instrumentation to audio amplification, this versatile component delivers superior results, making it the perfect choice for your next project. Trust Texas Instruments for cutting-edge technology and elevate your designs with the THS4271DGNR. Elevate your designs with the THS4271DGNR from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the components inside the operational amplifier, making it suitable for various environmental conditions.

Maximum Input Offset Voltage: 10000 uV

Low input offset voltage ensures accurate and precise signal processing, making this operational amplifier ideal for precision applications.

Nominal Common Mode Reject Ratio: 72 dB

High common mode rejection ratio helps in eliminating noise and interference from the input signal, resulting in a cleaner output signal.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes this operational amplifier energy-efficient and suitable for low-power applications.

Nominal Unity Gain Bandwidth: 1400000 kHz

High unity gain bandwidth enables the operational amplifier to maintain stability and accuracy in high-frequency applications.

Technical Specifications

Operational Amplifiers (Op Amps) THS4271DGNR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Bandwidth (3dB):

40 MHz

Nominal Unity Gain Bandwidth:

1400 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

72 dB

Minimum Common Mode Rejection Ratio (CMRR ):

67 dB

Input Offset Voltage Limit:

10000 uV

Minimum Voltage Gain:

1412.5

Nominal Slew Rate:

1000 V/us

Maximum Input Offset Current (IIO):

8 uA

Peak Bias Current:

18 uA

Maximum Bias Current (IIB) @25 °C:

15 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

8.25 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-8.25 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

24 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.042 in (1.07 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Thin Profile, Shrink Pitch

Trade Compliance

THS4271DGNR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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