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THS4211DRBTG4

Texas Instruments

THS4211DRBTG4 by Texas Instruments

THS4211DRBTG4 by Texas Instruments is an Operational Amplifier with 14000uV Max Input Offset Voltage, 20uA Max Average Bias Current, and 56dB Nominal CMRR. Ideal for industrial applications requiring a wide bandwidth of 35MHz, it operates in temperatures ranging from -40 to 85°C with a supply voltage of ±5V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 26,900 parts In-Stock

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Vyrian

USA . 4,282 parts In-Stock

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Digiode

USA . 1,755 parts In-Stock

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1,755

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,219 parts In-Stock

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$2.410

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$2.410

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One Stop Electronics

USA . 739 parts In-Stock

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$3.410

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739

$3.410

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Parana Technologies

USA . 1,727 parts In-Stock

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$3.875

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$4.356

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1,727

$3.875

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$4.356

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ChromeModa Solutions

Germany . 6,835 parts In-Stock

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$4.354

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$3.570

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6,835

$4.354

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IDEA Electronic Components Group

UK . 1,224 parts In-Stock

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$4.354

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$3.919

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$3.919

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AZTECH Wire

Italy . 509 parts In-Stock

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$17.507

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509

$17.507

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Microchip USA

USA . 2,690 parts In-Stock

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Corphita

USA . 578 parts In-Stock

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DigiPath Technology Company

USA . 408 parts In-Stock

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$3.926

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Bastille Electronics

Australia . 95 parts In-Stock

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Overview

Unlock the power of precision and reliability with the THS4211DRBTG4 by Texas Instruments. Crafted by a trusted industry leader, this operational amplifier delivers unparalleled performance in a compact package. Ideal for a wide range of applications, this op amp offers superior functionality and efficiency. Experience seamless operation and high-quality results with the THS4211DRBTG4, the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the product suitable for various environments.

Maximum Input Offset Voltage: 14000 uV

Low input offset voltage ensures accurate signal processing and minimal errors.

Maximum Average Bias Current (IIB): 20 uA

Low bias current helps in reducing power consumption and enhancing efficiency.

Surface Mount: YES

Ease of installation and compact design for space-efficient applications.

Nominal Common Mode Reject Ratio: 56 dB

Provides good rejection of common-mode signals for improved accuracy in differential inputs.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage for compatibility with various systems and circuits.

No. of Terminals: 8

Sufficient terminals for connectivity and versatility in circuit configurations.

Maximum Input Offset Current (IIO): 6 uA

Low input offset current contributes to accurate signal processing and stability.

Nominal Unity Gain Bandwidth: 350000 kHz

High unity gain bandwidth for fast signal processing and high-frequency applications.

Technical Specifications

Operational Amplifiers (Op Amps) THS4211DRBTG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Total Functions:

1

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Bandwidth (3dB):

35 MHz

Nominal Unity Gain Bandwidth:

350 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

56 dB

Minimum Common Mode Rejection Ratio (CMRR ):

52 dB

Input Offset Voltage Limit:

14000 uV

Minimum Voltage Gain:

1412.5

Nominal Slew Rate:

970 V/us

Maximum Input Offset Current (IIO):

6 uA

Peak Bias Current:

20 uA

Maximum Bias Current (IIB) @25 °C:

15 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

8.25 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-8.25 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

22 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.039 in (1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Very Thin Profile

Trade Compliance

THS4211DRBTG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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