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THS4151CDGKR

Texas Instruments

THS4151CDGKR by Texas Instruments

THS4151CDGKR by Texas Instruments is an Operational Amplifier with 8500uV Max Input Offset Voltage, 15uA Max Average Bias Current, and 83dB Nominal CMRR. Ideal for applications requiring high precision amplification in a compact form factor.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,023 parts In-Stock

1+ parts

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5,023

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Digiode

USA . 3,671 parts In-Stock

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3,671

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,339 parts In-Stock

1+ parts

$0.410

100+ parts

-

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1,339

$0.410

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Parana Technologies

USA . 864 parts In-Stock

1+ parts

$4.355

100+ parts

$404.406

1k+ parts

$3.919

10k+ parts

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864

$4.355

$404.406

$3.919

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DigiPath Technology Company

USA . 1,878 parts In-Stock

1+ parts

$4.795

100+ parts

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1,878

$4.795

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ChromeModa Solutions

Germany . 2,863 parts In-Stock

1+ parts

$4.893

100+ parts

$4.012

1k+ parts

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2,863

$4.893

$4.012

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IDEA Electronic Components Group

UK . 404 parts In-Stock

1+ parts

$4.893

100+ parts

-

1k+ parts

$4.404

10k+ parts

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404

$4.893

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$4.404

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AZTECH Wire

Italy . 738 parts In-Stock

1+ parts

$17.006

100+ parts

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738

$17.006

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A-Z Elektronik GmbH

Germany . 7,148 parts In-Stock

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7,148

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Microchip USA

USA . 5,764 parts In-Stock

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5,764

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Corphita

USA . 1,573 parts In-Stock

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1,573

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Overview

Upgrade your operational amplifier experience with the THS4151CDGKR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and reliability. This versatile op amp is perfect for a wide range of applications, offering high performance and precision. With a compact design and low power consumption, the THS4151CDGKR provides excellent value and efficiency to customers. Trust Texas Instruments to deliver exceptional products that meet all your operational amplifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the body material makes this product lightweight and cost-effective.

Maximum Input Offset Voltage: 8500 uV

The low maximum input offset voltage ensures accurate and precise signal processing.

Maximum Average Bias Current (IIB): 15 uA

The low bias current helps in reducing power consumption and improving overall efficiency.

Surface Mount: YES

The surface mount capability makes installation and assembly convenient and efficient.

Nominal Common Mode Reject Ratio: 83 dB

The high common mode reject ratio ensures better rejection of noise and interference in the signal.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V makes it compatible with a wide range of electronic systems.

Maximum Supply Voltage Limit: 16.5 V

The high maximum supply voltage limit provides flexibility in operating conditions.

Maximum Operating Temperature: 70 °C

The wide operating temperature range allows the product to function effectively in various environments.

Technology: BIPOLAR

The bipolar technology used in this operational amplifier offers high performance and reliability.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, this product is suitable for a wide range of signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) THS4151CDGKR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

BIPOLAR

Power Supply:

±5/±15 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Common Mode Rejection Ratio (CMRR ):

83 dB

Input Offset Voltage Limit:

8500 uV

Nominal Slew Rate:

650 V/us

Peak Bias Current:

15 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

16.5 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Maximum Supply Current:

23 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

THS4151CDGKR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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