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THS4130IDGNRG4

Texas Instruments

THS4130IDGNRG4 by Texas Instruments

THS4130IDGNRG4 by Texas Instruments is an Operational Amplifier with 3000uV Max Input Offset Voltage, 95dB Nominal CMRR, and 80MHz Bandwidth. Ideal for industrial applications requiring high precision amplification in a compact package.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 15,800 parts In-Stock

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15,800

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Vyrian

USA . 7,397 parts In-Stock

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7,397

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Digiode

USA . 2,710 parts In-Stock

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2,710

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Nova Conductors

Japan . 43 parts In-Stock

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43

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,236 parts In-Stock

1+ parts

$2.410

100+ parts

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1,236

$2.410

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One Stop Electronics

USA . 311 parts In-Stock

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$4.410

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311

$4.410

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Parana Technologies

USA . 2,228 parts In-Stock

1+ parts

$5.621

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$6.419

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2,228

$5.621

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$6.419

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DigiPath Technology Company

USA . 987 parts In-Stock

1+ parts

$6.190

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987

$6.190

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ChromeModa Solutions

Germany . 5,195 parts In-Stock

1+ parts

$6.316

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$5.179

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$6.316

$5.179

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IDEA Electronic Components Group

UK . 232 parts In-Stock

1+ parts

$6.316

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$5.684

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232

$6.316

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$5.684

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AZTECH Wire

Italy . 846 parts In-Stock

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$11.993

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846

$11.993

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Continental Prestige Electronics

USA . 5,824 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,677 parts In-Stock

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Argo Parts USA

USA . 3,253 parts In-Stock

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Microchip USA

USA . 2,764 parts In-Stock

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Corphita

USA . 2,342 parts In-Stock

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Bastille Electronics

Australia . 40 parts In-Stock

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40

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Overview

Unlock the power of precision with the THS4130IDGNRG4 by Texas Instruments, a high-quality operational amplifier designed for a wide range of applications. Trust in the renowned manufacturer's expertise to deliver exceptional performance and reliability. Ideal for precision instruments, audio equipment, and sensor interfaces, this op amp offers unparalleled value and benefits. Experience superior signal processing capabilities without compromising on quality. Elevate your projects with the THS4130IDGNRG4 and take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material makes the product lightweight and durable, making it suitable for various applications.

Maximum Input Offset Voltage: 3000 uV

The low maximum input offset voltage ensures accurate and precise signal processing, making it ideal for applications where precision is critical.

Maximum Average Bias Current (IIB): 6 uA

The low average bias current helps in reducing power consumption and improves efficiency in circuit designs.

Surface Mount: YES

The surface mount capability makes installation and PCB assembly easier, saving time and effort during production.

Nominal Common Mode Reject Ratio: 95 dB

The high common mode reject ratio ensures excellent rejection of common-mode signals, leading to cleaner and more accurate output signals.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage makes it compatible with standard power supply configurations, simplifying design considerations.

Power Supplies (V): +-5/+-15

The dual power supply options of +/-5V and +/-15V provide flexibility in operating voltage requirements for different applications.

No. of Terminals: 8

The 8 terminals offer sufficient connectivity options for various input and output configurations, ensuring versatility in circuit designs.

Maximum Input Offset Current (IIO): 0.5 uA

The low input offset current contributes to improved accuracy and stability in signal processing applications.

Nominal Unity Gain Bandwidth: 135000 kHz

The high unity gain bandwidth supports high-speed signal processing, making it suitable for applications requiring fast response times.

Technical Specifications

Operational Amplifiers (Op Amps) THS4130IDGNRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±5/±15 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Bandwidth (3dB):

80 MHz

Nominal Unity Gain Bandwidth:

135 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

95 dB

Minimum Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

3548

Nominal Slew Rate:

52 V/us

Maximum Input Offset Current (IIO):

500 nA

Peak Bias Current:

6 uA

Maximum Bias Current (IIB) @25 °C:

6 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

16.5 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-16.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

15 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold Silver

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

THS4130IDGNRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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