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THS4130CDGNRG4

Texas Instruments

THS4130CDGNRG4 by Texas Instruments

THS4130CDGNRG4 by Texas Instruments is an Operational Amplifier with 2000uV Max Input Offset Voltage, 6uA Max Average Bias Current, and 95dB Nominal CMRR. Ideal for applications requiring high precision amplification in a compact package with a wide bandwidth of 80MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 7,990 parts In-Stock

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7,990

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Vyrian

USA . 3,081 parts In-Stock

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3,081

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Digiode

USA . 987 parts In-Stock

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987

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Nova Conductors

Japan . 200 parts In-Stock

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200

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Distributors (Availability)

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Ampacity Inc.

Singapore . 944 parts In-Stock

1+ parts

$1.410

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944

$1.410

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Parana Technologies

USA . 377 parts In-Stock

1+ parts

$3.836

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$4.322

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377

$3.836

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$4.322

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Corohmni

South Africa . 857 parts In-Stock

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$3.905

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857

$3.905

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ChromeModa Solutions

Germany . 3,404 parts In-Stock

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$4.310

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$3.534

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3,404

$4.310

$3.534

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IDEA Electronic Components Group

UK . 527 parts In-Stock

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$4.310

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$3.879

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527

$4.310

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$3.879

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AZTECH Wire

Italy . 378 parts In-Stock

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$5.180

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378

$5.180

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One Stop Electronics

USA . 1,066 parts In-Stock

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$5.410

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$5.410

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Argo Parts USA

USA . 4,945 parts In-Stock

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Corphita

USA . 4,093 parts In-Stock

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Continental Prestige Electronics

USA . 2,143 parts In-Stock

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DigiPath Technology Company

USA . 991 parts In-Stock

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$3.886

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$3.886

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Bastille Electronics

Australia . 870 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the THS4130CDGNRG4 by Texas Instruments. As a leading manufacturer in operational amplifiers, Texas Instruments delivers innovative solutions for a wide range of applications. From precision instrumentation to audio processing, this amplifier offers superior quality and versatility. Trust in Texas Instruments to provide the value and benefits you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the diode, ensuring long-term reliability.

Maximum Reverse Current: 100 uA

Low reverse current ensures efficient operation and minimal power loss in the circuit.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy installation and integration into various electronic devices.

Application: HIGH VOLTAGE

Designed for high voltage applications, making it suitable for use in power supplies and industrial equipment.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand harsh environmental conditions without compromising performance.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is ideal for converting alternating current (AC) to direct current (DC) in applications such as power supplies and battery chargers.

Maximum Forward Voltage (VF): 1.1 V

Low forward voltage drop ensures minimal power dissipation and efficient energy conversion.

Maximum Output Current: 20 A

Capable of handling high output currents, making it suitable for power electronics and high-current applications.

Maximum Repetitive Peak Reverse Voltage: 1200 V

With a high reverse voltage rating, this diode can handle high voltage spikes and transient events without failing.

Diode Element Material: SILICON

Silicon diodes offer reliability and stability in various operating conditions, making them a popular choice for electronic circuits.

Technical Specifications

Operational Amplifiers (Op Amps) THS4130CDGNRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±5/±15 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Bandwidth (3dB):

80 MHz

Nominal Unity Gain Bandwidth:

150 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

95 dB

Minimum Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

2000 uV

Minimum Voltage Gain:

3548

Nominal Slew Rate:

52 V/us

Maximum Input Offset Current (IIO):

500 nA

Peak Bias Current:

6 uA

Maximum Bias Current (IIB) @25 °C:

6 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

16.5 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-16.5 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

15 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold Silver

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

THS4130CDGNRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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