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THS4121CDGKR

Texas Instruments

THS4121CDGKR by Texas Instruments

THS4121CDGKR by Texas Instruments is an Operational Amplifier with 100 MHz bandwidth, 96 dB CMRR, and 3.3V supply voltage. Ideal for high-speed applications requiring low bias current and wideband performance in a compact square package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,970 parts In-Stock

1+ parts

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8,970

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Digiode

USA . 4,876 parts In-Stock

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4,876

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Cyclops Electronics Ltd

UK . 748 parts In-Stock

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748

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 105 parts In-Stock

1+ parts

$5.927

100+ parts

-

1k+ parts

$6.712

10k+ parts

-

105

$5.927

-

$6.712

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ChromeModa Solutions

Germany . 2,787 parts In-Stock

1+ parts

$6.659

100+ parts

$5.460

1k+ parts

-

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2,787

$6.659

$5.460

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IDEA Electronic Components Group

UK . 186 parts In-Stock

1+ parts

$6.659

100+ parts

-

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$5.993

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186

$6.659

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$5.993

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One Stop Electronics

USA . 1,643 parts In-Stock

1+ parts

$8.410

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1,643

$8.410

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AZTECH Wire

Italy . 610 parts In-Stock

1+ parts

$14.897

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610

$14.897

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Microchip USA

USA . 3,450 parts In-Stock

1+ parts

$19.821

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3,450

$19.821

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A-Z Elektronik GmbH

Germany . 12,350 parts In-Stock

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12,350

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DigiPath Technology Company

USA . 1,457 parts In-Stock

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$6.004

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1,457

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$6.004

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Corphita

USA . 1,096 parts In-Stock

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1,096

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Kepictronics

USA . 604 parts In-Stock

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604

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Overview

Discover the exceptional performance and reliability of the THS4121CDGKR by Texas Instruments, a leading manufacturer in operational amplifiers (Op Amps). This high-quality product offers unparalleled precision and efficiency in a variety of applications. With a wide nominal bandwidth of 100 MHz and a nominal unity gain bandwidth of 100000 kHz, this amplifier delivers superior results. Trust Texas Instruments for cutting-edge technology and innovative solutions that bring value and benefits to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers durability and protection for the internal components of the operational amplifier, ensuring long-term reliability.

Maximum Input Offset Voltage: 8000 uV

Low input offset voltage helps minimize errors in the amplifier's output signal, leading to accurate performance.

Maximum Average Bias Current (IIB): 0.0000012 uA

Low bias current ensures minimal power consumption and reduces signal distortion, making the amplifier suitable for precision applications.

Surface Mount: YES

The surface mount feature allows for easy and efficient integration onto circuit boards, saving space and facilitating mass production.

Nominal Common Mode Reject Ratio: 96 dB

High common mode rejection ratio signifies the amplifier's ability to eliminate noise and interference from the input signal, resulting in a clean output.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V provides compatibility with a wide range of systems and power sources.

Nominal Unity Gain Bandwidth: 100000 kHz

The high unity gain bandwidth indicates fast response time and high-frequency performance, making the amplifier suitable for applications requiring precision and speed.

Technical Specifications

Operational Amplifiers (Op Amps) THS4121CDGKR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3.3 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Bandwidth (3dB):

100 MHz

Nominal Unity Gain Bandwidth:

100 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

96 dB

Minimum Common Mode Rejection Ratio (CMRR ):

64 dB

Input Offset Voltage Limit:

8000 uV

Minimum Voltage Gain:

1000

Nominal Slew Rate:

55 V/us

Peak Bias Current:

1.2 pA

Maximum Bias Current (IIB) @25 °C:

1.2 pA

Operational Characteristics

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage:

3.6 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

13.5 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

SOP8,.25

Trade Compliance

THS4121CDGKR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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